SBVS412A November   2022  – December 2022 TPS7A53A-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable and Shutdown
      2. 7.3.2 Active Discharge
      3. 7.3.3 Power-Good Output (PG)
      4. 7.3.4 Internal Current Limit
      5. 7.3.5 Thermal Shutdown Protection (TSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input, Output, and Bias Capacitor Requirements
      2. 8.1.2 Dropout Voltage
      3. 8.1.3 Output Noise
      4. 8.1.4 Estimating Junction Temperature
      5. 8.1.5 Soft Start, Sequencing, and Inrush Current
      6. 8.1.6 Power-Good Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Board Layout
        2. 8.4.1.2 RTJ Package — High CTE Mold Compound
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RTJ|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4.2 Dropout Operation

If the input voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other conditions are met for normal operation, the device operates in dropout mode. Similarly, if the bias voltage is lower than the nominal output voltage plus the specified dropout voltage, but all other conditions are met for normal operation, the device operates in dropout mode as well. In this mode, the output voltage tracks the input voltage. During this mode, the transient performance of the device becomes significantly degraded because the pass transistor is in the ohmic or triode region, and functions as a switch. Line or load transients in dropout can result in large output voltage deviations.

When the device is in a steady dropout state, defined as when the device is in dropout (VIN < VOUT + VDO(IN) or VBIAS < VOUT + VDO(BIAS) directly after being in normal regulation state, but not during start up), the pass transistor is driven into the ohmic or triode region. When the input voltage returns to a value greater than or equal to the nominal output voltage plus the dropout voltage (VOUT(NOM) + VDO(IN)), the output voltage can overshoot for a short time when the device pulls the pass transistor back into the linear region.