SBVS446A August   2023  – January 2024 TPS7A53B

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Voltage Regulation Features
        1. 6.3.1.1 DC Regulation
        2. 6.3.1.2 AC and Transient Response
      2. 6.3.2 System Start-Up Features
        1. 6.3.2.1 Programmable Soft-Start (NR/SS Pin)
        2. 6.3.2.2 Internal Sequencing
          1. 6.3.2.2.1 Enable (EN)
          2. 6.3.2.2.2 Undervoltage Lockout (UVLO) Control
          3. 6.3.2.2.3 Active Discharge
        3. 6.3.2.3 Power-Good Output (PG)
      3. 6.3.3 Internal Protection Features
        1. 6.3.3.1 Foldback Current Limit (ICL)
        2. 6.3.3.2 Thermal Protection (Tsd)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Regulation
      2. 6.4.2 Disabled
      3. 6.4.3 Current Limit Operation
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1  Recommended Capacitor Types
        1. 7.1.1.1 Input and Output Capacitor Requirements (CIN and COUT)
        2. 7.1.1.2 Noise-Reduction and Soft-Start Capacitor (CNR/SS)
        3. 7.1.1.3 Feed-Forward Capacitor (CFF)
      2. 7.1.2  Soft-Start and Inrush Current
      3. 7.1.3  Optimizing Noise and PSRR
      4. 7.1.4  Charge Pump Noise
      5. 7.1.5  Current Sharing
      6. 7.1.6  Adjustable Operation
      7. 7.1.7  Power-Good Operation
      8. 7.1.8  Undervoltage Lockout (UVLO) Operation
      9. 7.1.9  Dropout Voltage (VDO)
      10. 7.1.10 Device Behavior During Transition From Dropout Into Regulation
      11. 7.1.11 Load Transient Response
      12. 7.1.12 Reverse Current Protection Considerations
      13. 7.1.13 Power Dissipation (PD)
      14. 7.1.14 Estimating Junction Temperature
      15. 7.1.15 TPS7A53EVM Thermal Analysis
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
        1. 7.4.1.1 Board Layout
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Device Nomenclature
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1.12 Reverse Current Protection Considerations

As with most LDOs, this device can be damaged by excessive reverse current.

Conditions where excessive reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT > VIN + 0.3V:

  • If the device has a large COUT, then the input supply collapses quickly and the load current becomes very small
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If an excessive reverse current flow is expected in the application, then external protection must be used to protect the device. Figure 7-4 shows one approach of protecting the device.

GUID-CEDFA7BB-5439-4973-884A-9A02DDFCBE8B-low.gifFigure 7-4 Example Circuit for Reverse Current Protection Using a Schottky Diode