SBVS312A September   2017  – February 2018 TPS7A54-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1.      Powering RF Components
      2.      Output Voltage Noise vs Frequency and Output Voltage
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Voltage Regulation Features
        1. 7.3.1.1 DC Regulation
        2. 7.3.1.2 AC and Transient Response
      2. 7.3.2 System Start-Up Features
        1. 7.3.2.1 Programmable Soft Start (NR/SS Pin)
        2. 7.3.2.2 Internal Sequencing
          1. 7.3.2.2.1 Enable (EN)
          2. 7.3.2.2.2 Undervoltage Lockout (UVLO) Control
          3. 7.3.2.2.3 Active Discharge
        3. 7.3.2.3 Power-Good Output (PG)
      3. 7.3.3 Internal Protection Features
        1. 7.3.3.1 Foldback Current Limit (ICL)
        2. 7.3.3.2 Thermal Protection (Tsd)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Regulation
      2. 7.4.2 Disabled
      3. 7.4.3 Current Limit Operation
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
        1. 8.1.1.1 Input and Output Capacitor Requirements (CIN and COUT)
        2. 8.1.1.2 Noise-Reduction and Soft-Start Capacitor (CNR/SS)
        3. 8.1.1.3 Feed-Forward Capacitor (CFF)
      2. 8.1.2  Soft Start and Inrush Current
      3. 8.1.3  Optimizing Noise and PSRR
      4. 8.1.4  Charge Pump Noise
      5. 8.1.5  Current Sharing
      6. 8.1.6  Adjustable Operation
      7. 8.1.7  Power-Good Operation
      8. 8.1.8  Undervoltage Lockout (UVLO) Operation
      9. 8.1.9  Dropout Voltage (VDO)
      10. 8.1.10 Device Behavior During Transition From Dropout Into Regulation
      11. 8.1.11 Load Transient Response
      12. 8.1.12 Reverse Current Protection Considerations
      13. 8.1.13 Power Dissipation (PD)
      14. 8.1.14 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Board Layout
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
        1. 11.1.1.1 Reference Designs
      2. 11.1.2 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.10 Device Behavior During Transition From Dropout Into Regulation

Some applications have transients that place the device into dropout, especially with a device such as a high-current linear regulator. A typical application with these transient conditions may require setting VIN ≤ (VOUT + VDO) in order to keep the device junction temperature within the specified operating range. A load transient or line transient with these conditions can place the device into dropout; for example, a load transient from 1 A to 4 A at 1 A/µs when operating with a VIN of 5.4 V and a VOUT of 5.0 V.

The load transient saturates the error amplifier output stage when the gate of the pass element is driven as high as possible by the error amplifier, thus making the pass element function like a resistor from VIN to VOUT. The error amplifier response time to this load transient (IOUT = 4 A to 1 A at 1 A/µs) is limited because the error amplifier must first recover from saturation, and then place the pass element back into active mode. During the recovery from the load transient, VOUT overshoots because the pass element is functioning as a resistor from VIN to VOUT. If operating under these conditions, apply a higher dc load or increase the output capacitance in order to reduce the overshoot.