SBVS416B May   2022  – August 2022 TPS7A74

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable and Shutdown
      2. 7.3.2 Active Discharge
      3. 7.3.3 Global Undervoltage Lockout (UVLO) Circuit
      4. 7.3.4 Internal Current Limit
      5. 7.3.5 Thermal Shutdown Protection (TSD)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
    5. 7.5 Programming
      1. 7.5.1 Programmable Soft-Start
      2. 7.5.2 Sequencing Requirements
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adjusting the Output Voltage
      2. 8.1.2 Input, Output, and Bias Capacitor Requirements
      3. 8.1.3 Transient Response
      4. 8.1.4 Dropout Voltage
      5. 8.1.5 Output Noise
      6. 8.1.6 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 FPGA I/O Supply at 1.8 V With a Bias Rail
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Estimating Junction Temperature
      2. 8.4.2 Layout Example
  9. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Evaluation Modules
        2. 9.1.1.2 Spice Models
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.5 Thermal Shutdown Protection (TSD)

The internal thermal shutdown protection circuit disables the output when the thermal junction temperature (TJ ) of the pass transistor rises to the thermal shutdown temperature threshold, TSD(shutdown) (typical). The thermal shutdown circuit hysteresis ensures that the LDO resets (turns on) when the temperature falls to TSD(reset) (typical).

The thermal time constant of the semiconductor die is fairly short; thus, the device may cycle on and off when thermal shutdown is reached until the power dissipation is reduced. Power dissipation during start up can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before start up completes.

For reliable operation, limit the junction temperature to the maximum listed in the Section 6.3 table. Operation above this maximum temperature causes the device to exceed operational specifications. Although the internal protection circuitry is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the regulator into thermal shutdown, or above the maximum recommended junction temperature, reduces long-term reliability.