SBVS336C september 2021 – june 2023 TPS7A94
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VIN | Input supply voltage range | 1.7 | 5.7 | V | ||
VUVLO | Input supply UVLO | VIN rising, no load | 1.6 | 1.7 | V | |
VHYS(UVLO) | Input supply UVLO hysteresis | No load | 40 | 53 | mV | |
INR/SS | NR/SS pin current | VIN = 1.7 V, IOUT = 1 mA, VOUT = 1.2 V | 150 | µA | ||
1.7 V ≤ VIN ≤ 5.5 V, 0.4 V ≤ VOUT < 1.2 V, 1 mA ≤ IOUT ≤ 1A | –1.5 | 1.5 | % | |||
1.7 V ≤ VIN ≤ 5.5 V, 1.2 V ≤ VOUT ≤ 5.1 V, 1 mA ≤ IOUT ≤ 1A | –1 | 1 | % | |||
IFAST_SS | NR/SS fast start-up charging current | VNR/SS = GND, VIN ≥ 2.5 V, VFB_PG < 0.2 V, IOUT = 0 mA | 2.1 | mA | ||
VNR/SS = GND, VIN = 1.7 V, VFB_PG < 0.2 V, IOUT = 0 mA | 1.5 | |||||
VOUT | Output voltage range | 0 | 5.5 | V | ||
VOS | Output offset voltage (VNR/SS – VOUT) | 1.7 V ≤ VIN ≤ 5.7 V, 1.2 V ≤ VOUT ≤ 5.1 V, 1 mA ≤ IOUT ≤ 1 A |
–2 | ±0.1 | 2 | mV |
1.7 V ≤ VIN ≤ 5.7 V, 0.4 V ≤ VOUT < 1.2 V, 1 mA ≤ IOUT ≤ 1 A |
–5 | ±0.2 | 5 | |||
ΔVOUT(ΔVIN) | Line regulation: ΔINR/SS | 0.4 V ≤ VOUT < 1.2 V, IOUT = 1 mA, VIN = (VOUT + 0.5 V) to 5.7 V |
–0.9 | nA/V | ||
VOUT = 1.2 V and VOUT = 3.3 V, IOUT = 1mA, VIN = (VOUT + 0.5V) to 5.7 V |
2 | |||||
Line regulation: ΔVOS | 0.4 V ≤ VOUT < 1.2 V, IOUT = 1 mA, VIN = (VOUT + 0.5 V) to 5.7 V |
–4.5 | µV/V | |||
VOUT = 1.2 V & VOUT = 3.3 V, IOUT = 1 mA, VIN = (VOUT + 0.5 V) to 5.7 V |
2.1 | |||||
ΔVOUT(ΔIOUT) | Load regulation: ΔINR/SS(1) | VIN = 1.7 V, VOUT = 1.2 V, 1 mA ≤ IOUT ≤ 1 A | 2.3 | nA | ||
VIN = 3.8 V, VOUT = 3.3 V, 1 mA ≤ IOUT ≤ 1 A | –3.6 | |||||
VIN = 5.6 V, VOUT = 5.1 V, 1 mA ≤ IOUT ≤ 1 A | –21 | |||||
Load regulation: ΔVOS(1) | VIN = VOUT(NOM) + 0.5 V, 1.2V ≤ VOUT ≤ 5.1 V, 1 mA ≤ IOUT ≤ 1 A | 0.03 | mV | |||
ΔINR/SS(ΔVNR/SS) | Change in INR/SS vs VNR/SS | 0.4 V ≤ VNR/SS ≤ 1.5 V, VIN = 5.7 V, IOUT = 1 mA | 6.3 | nA | ||
1.5 V ≤ VNR/SS ≤ 5 V, VIN = 5.7 V, IOUT = 1 mA | –3.3 | nA | ||||
ΔVOS(ΔVNR/SS) | Change in VOS vs VNR/SS | 0.4 V ≤ VNR/SS ≤ 1.5 V, VIN = 5.7 V, IOUT = 1 mA | 0.033 | mV | ||
1.5 V ≤ VNR/SS ≤ 5 V, VIN = 5.7 V, IOUT = 1 mA | 0.013 | mV | ||||
VDO | Dropout voltage(2) | 1.7 V ≤ VIN < 2.0 V, IOUT = 1 mA, VOUT = 99% x VOUT(NOM) |
160 | mV | ||
1.7 V ≤ VIN < 2.0 V, IOUT = 1 A, VOUT = 99% x VOUT(NOM) |
165 | 220 | ||||
VIN ≥ 2.0 V, IOUT = 1 mA, VOUT = 99% x VOUT(NOM) |
140 | |||||
VIN ≥ 2.0 V, IOUT = 1 A, VOUT = 99% x VOUT(NOM) |
150 | 240 | ||||
ICL | Output current limit | VOUT forced at 90% of VOUT(NOM), VIN = VOUT(NOM) + 200 mV or VIN = 1.7 V whichever is greater, VOUT(NOM) ≥ 1.2 V, RPGFB-to-GND ≤ 12.5 kΩ (±1%) |
1.2 | 1.3 | 1.4 | A |
VOUT forced at 90% of VOUT(NOM), VIN = VOUT(NOM) + 200 mV or VIN = 1.7 V whichever is greater, VOUT(NOM) ≥ 1.2 V, RPGFB-to-GND = 50 kΩ (±1%) |
0.96 | 1.04 | 1.12 | A | ||
VOUT forced at 90% of VOUT(NOM), VIN = VOUT(NOM) + 200 mV or VIN = 1.7 V whichever is greater, VOUT(NOM) ≥ 1.2 V, RPGFB-to-GND = 100 kΩ (±1%) |
0.72 | 0.78 | 0.84 | A | ||
ΔISC | Output current limit variation (3) | VIN = VOUT(NOM) + 200 mV or VIN = 1.7 V whichever is greater, VOUT = 0 V | 5 | % | ||
IGND | GND pin current | VIN = 5.7 V, VOUT = 5.1 V, IOUT = 0.1 mA | 8 | 15 | 22 | mA |
VIN = 1.7 V, IOUT = 1 A, VOUT = 1.2 V | 34 | 41 | 51 | |||
ISDN | Shutdown GND pin current | PG = (open), VIN = 5.7 V, VEN_UV = 0.4 V | 0.1 | 30 | µA | |
IEN_UV | EN_UV pin current | VIN = 5.7 V, 0 V ≤ VEN_UV ≤ 5.5 V | –1 | 1 | µA | |
VIH(EN_UV) | EN_UV trip point rising (turn-on) | VIN = 1.7 V, no load | 1.20 | 1.22 | 1.25 | V |
VHYS(EN_UV) | EN_UV trip point hysteresis | VIN = 1.7 V, no load | 150 | mV | ||
tPGDH | PG delay time rising | Time from VOUT crossing PG threshold% to PG reaching 20% of the value | 1.1 | ms | ||
tPGDL | PG delay time falling | Time from 90% of VOUT to 80% of PG | 3 | µs | ||
VFB_PG | FB_PG pin trip point (rising) | 1.7 V ≤ VIN ≤ 5.7 V | 0.19 | 0.2 | 0.21 | V |
VHYS(FB_PG) | FB_PG pin hysteresis | 1.7 V ≤ VIN ≤ 5.7 V | 6 | mV | ||
VOL(PG) | PG pin low-level output voltage | VIN = 1.7 V, VOUT < VFB_PG(threshold), IPG = –1 mA (current into device) | 0.4 | V | ||
IPG(LKG) | PG pin leakage current | VIN = 5.7 V, VOUT > VFB_PG(threshold), VPG = 5.5 V | 1 | µA | ||
IFB_PG | FB_PG pin leakage current | VIN = 5.7 V, VFB_PG = 0.2 V | –100 | 100 | nA | |
PSRR | Power-supply ripple rejection | f = 1 MHz, VIN = 3.8 V, VOUT(NOM) = 3.3 V, IOUT = 750 mA, CNR/SS = 4.7 µF |
51 | dB | ||
Vn | Output noise voltage | BW = 10 Hz to 100 kHz, 1.7 V ≤ VIN ≤ 5.7 V, VOUT(NOM) = 1.2 V, IOUT = 1.0 A, CNR/SS = 4.7 µF |
0.46 | µVRMS | ||
BW = 10 Hz to 100 kHz, VIN = 1.8 V, VOUT(NOM) = 0.8 V, IOUT = 1.0 A, CNR/SS = 4.7 µF |
0.835 | |||||
Noise spectral density | f = 100 Hz, 1.7 V ≤VIN ≤ 5.7 V, VOUT(NOM) = 1.2 V, IOUT = 1.0 A, CNR/SS = 4.7 µF |
6.6 | nV/√Hz | |||
f = 1 kHz, 1.7 V ≤VIN ≤ 5.7 V, VOUT(NOM) = 1.2 V, IOUT = 1.0 A, CNR/SS = 4.7 µF |
1.3 | |||||
f = 10 kHz, 1.7 V ≤ VIN ≤ 5.7 V, VOUT(NOM) = 1.2 V, IOUT = 1.0 A, CNR/SS = 4.7 µF |
1.1 | |||||
RPULLDOWN_NRSS | NRSS active discharge resistance | VIN = 1.7 V, VEN_UV = GND | 15 | Ω | ||
RPULLDOWN | Output active discharge resistance | VIN = 1.7 V, VEN_UV = GND | 195 | Ω | ||
TSD(shutdown) | Thermal shutdown temperature | Shutdown, temperature increasing | 175 | °C | ||
TSD(reset) | Thermal shutdown reset temperature | Reset, temperature decreasing | 160 |