SLVSEN7D april   2019  – may 2023 TPS7H4001-SP

PRODMIX  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Options Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Electrical Characteristics - All Devices
    6. 7.6  Electrical Characteristics: CDFP and KGD Options
    7. 7.7  Electrical Characteristics: HTSSOP (SHP) Option
    8. 7.8  Electrical Characteristics: HTSSOP (QMLP) Option
    9. 7.9  Quality Conformance Inspection
    10. 7.10 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  VIN and Power VIN Pins (VIN and PVIN)
      2. 8.3.2  Voltage Reference
      3. 8.3.3  Adjusting the Output Voltage
      4. 8.3.4  Safe Start-Up Into Prebiased Outputs
      5. 8.3.5  Error Amplifier
      6. 8.3.6  Enable and Adjust UVLO
      7. 8.3.7  Adjustable Switching Frequency and Synchronization (SYNC)
        1. 8.3.7.1 Internal Oscillator Mode
        2. 8.3.7.2 External Synchronization Mode
        3. 8.3.7.3 Primary-Secondary Operation Mode
      8. 8.3.8  Soft-Start (SS/TR)
      9. 8.3.9  Power Good (PWRGD)
      10. 8.3.10 Sequencing
      11. 8.3.11 Output Overvoltage Protection (OVP)
      12. 8.3.12 Overcurrent Protection
        1. 8.3.12.1 High-Side MOSFET Overcurrent Protection
        2. 8.3.12.2 Low-Side MOSFET Overcurrent Protection
      13. 8.3.13 Thermal Shutdown
      14. 8.3.14 Turn-On Behavior
      15. 8.3.15 Slope Compensation
        1. 8.3.15.1 Slope Compensation Requirements
      16. 8.3.16 Small Signal Model for Frequency Compensation
    4. 8.4 Device Functional Modes
      1. 8.4.1 Fixed-Frequency PWM Control
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Operating Frequency
        2. 9.2.2.2 Output Inductor Selection
        3. 9.2.2.3 Output Capacitor Selection
        4. 9.2.2.4 Input Capacitor Selection
        5. 9.2.2.5 Soft-Start Capacitor Selection
        6. 9.2.2.6 Undervoltage Lockout (UVLO) Set Point
        7. 9.2.2.7 Output Voltage Feedback Resistor Selection
          1. 9.2.2.7.1 Minimum Output Voltage
        8. 9.2.2.8 Compensation Component Selection
      3. 9.2.3 Parallel Operation
      4. 9.2.4 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DDW|44
  • KGD|0
  • HKY|34
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.12.2 Low-Side MOSFET Overcurrent Protection

While the low-side MOSFET is turned on its conduction current is monitored by the internal circuitry. During normal operation the low-side MOSFET sources current to the load. At the end of every clock cycle, the low-side MOSFET sourcing current is compared to the internally set low-side sourcing current limit. If the low-side sourcing current is exceeded, the high-side MOSFET is not turned on and the low-side MOSFET stays on for the next cycle. The high-side MOSFET is turned on again when the low-side current is below the low-side sourcing current limit at the start of a cycle.

The low-side MOSFET may also sink current from the load. If the low-side sinking current limit is exceeded, the low-side MOSFET is turned off immediately for the rest of that clock cycle. In this scenario, both MOSFETs are off until the start of the next cycle.

When the low-side MOSFET turns off, the switch node voltage increases and forward biases the high-side MOSFET parallel diode (the high-side MOSFET is still off at this stage).