TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers

1 Features

Radiation performance:
- Radiation-hardness-assurance (RHA) up to
  total ionizing dose (TID) of 100krad(Si)
- Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to
  linear energy transfer (LET) = 75MeV-cm²/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm²/mg
1.3A peak source, 2.5A peak sink current
Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
Selectable input interlock protection in independent input mode
Split outputs for adjustable turn-on and turn-off times
30ns typical propagation delay in independent input mode
5.5ns typical delay matching
Plastic packages outgas tested per ASTM E595
Available in military temperature range (–55°C to 125°C)