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Data Sheet
TPS7H60x3-SP Radiation-Hardness-Assured 1.3A, 2.5A,
Half Bridge GaN FET Gate
Drivers
1 Features
- Radiation Performance:
- Radiation-hardness-assurance (RHA) up to
total ionizing dose (TID) of
100krad(Si) - Single-event latchup (SEL), single-event burnout
(SEB), and single-event gate rupture (SEGR) immune to linear energy
transfer (LET) = 75MeV-cm2/mg
- Single-event transient (SET) and single-event
functional interrupt (SEFI) characterized up to LET =
75MeV-cm2/mg
- 1.3A peak source, 2.5A peak sink current
- Two operational modes:
- Single PWM input with adjustable dead time
- Two independent inputs
- Selectable input interlock protection in
independent input mode
- Split outputs for adjustable turn-on and turn-off
times
- 30ns typical propagation delay in independent
input mode
- 5.5ns typical delay matching
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