SBVS445A October 2024 – December 2024 TPS7N53
PRODUCTION DATA
The device architecture features a highly accurate, high-precision, low-noise current reference followed by a state-of-the-art, complementary metal oxide semiconductor (CMOS) error amplifier (6 nV/√Hz at 10-kHz noise for VOUT ≥ 0.5 V). Unlike previous-generation LDOs, the unity-gain configuration of this device provides low noise over the entire output voltage range. Additional noise reduction and higher output current can be achieved by placing multiple TPS7N53 LDOs in parallel.