SBVS445A October   2024  – December 2024 TPS7N53

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Output Voltage Setting and Regulation
      2. 6.3.2 Low-Noise, Ultra-High Power-Supply Rejection Ratio (PSRR)
      3. 6.3.3 Programmable Soft-Start (SS Pin)
      4. 6.3.4 Precision Enable and UVLO
      5. 6.3.5 Power-Good Pin (PG Pin)
      6. 6.3.6 Active Discharge
      7. 6.3.7 Thermal Shutdown Protection (TSD)
    4. 6.4 Device Functional Modes
      1. 6.4.1 Normal Operation
      2. 6.4.2 Disabled
      3. 6.4.3 Current-Limit Operation
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1  Precision Enable (External UVLO)
      2. 7.1.2  Input and Output Capacitor Requirements (CIN and COUT)
      3. 7.1.3  Recommended Capacitor Types
      4. 7.1.4  Soft-Start (SS Pin) and Noise Reduction (NR Pin)
      5. 7.1.5  Charge Pump Noise
      6. 7.1.6  Optimizing Noise and PSRR
      7. 7.1.7  Adjustable Operation
      8. 7.1.8  Load Transient Response
      9. 7.1.9  Power-Good Functionality
      10. 7.1.10 Paralleling for Higher Output Current and Lower Noise
      11. 7.1.11 Power Dissipation (PD)
      12. 7.1.12 Estimating Junction Temperature
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Package Option Addendum

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.3.6 Active Discharge

To quickly discharge internal nodes, the device incorporates three internal pulldown metal-oxide semiconductor field effect transistors (MOSFETs). The first pulldown MOSFET connects a resistor (RDIS) from OUT to ground when the device is disabled to actively discharge the output capacitor. The second pulldown MOSFET connects a resistor from NR (RNR_DIS) to ground when the device is disabled and discharges the NR capacitor. The third pulldown MOSFET connects a resistor from SS (RSS_DIS) to ground when the device is disabled and discharges the SS capacitor. All pulldown MOSFETs are activated by any of the following events:

  • Driving the EN pin below the VEN(LOW) threshold
  • The IN pin voltage falling below the undervoltage lockout VUVLO(IN) threshold
Note: A brownout event on VINduring a low-input, low-output (LILO) operation (VIN = VIN(min)) can result in incomplete CNR discharge. Consider the time constant on both the NR and OUT pins for a proper system shutdown procedure.