SBVS445A October 2024 – December 2024 TPS7N53
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VUVLO(IN) | Input supply UVLO | VIN rising | 1.07 | 1.1 | V | |
VHYS(UVLO_IN) | Input supply UVLO hysteresis | 60 | mV | |||
ISS | SS fast start-up charging current | VSS = GND, VIN = 1.1 V | 27 | 30 | 35 | µA |
tSS | Soft-Start Time | CSS = 10nF, VOUT = 0.75V | 0.7 | ms | ||
VOUT | Output voltage accuracy (1) | 0.5V ≤ VOUT ≤ 1.5V, 0A ≤ IOUT ≤ 3A, 1.1V ≤ VIN ≤ 2.2V |
–1.5 | ±0.5 | 1.5 | % |
IREF | REF current pin | VIN = 1.1 V, VOUT = 0.5 V, ILOAD = 0 A | 150 | µA | ||
1.1V ≤ VIN ≤ 2.2V (1), 0.5V ≤ VOUT ≤ 1.5V, 0A ≤ IOUT ≤ 3A |
–1.5 | ±1 | 1.5 | % | ||
VOS | Output offset voltage (VNR - VOUT) | 1.1V ≤ VIN ≤ 2.2V (1), 0.5 V ≤ VOUT ≤ 1.5V, 0A ≤ IOUT ≤ 3A |
–2 | 2 | mV | |
ΔVOUT(ΔVIN) | Line regulation | 1.1V ≤ VIN ≤ 2.2V, VOUT = 0.5V, IOUT = 0A | -200 | µV/V | ||
ΔVOUT(ΔIOUT) | Load regulation | VOUT = 1.5V, 0A ≤ IOUT ≤ 3A | -100 | µV/A | ||
VDO | Dropout voltage (2) | VOUT ≥ 1.2V, IOUT = 3A | 95 | 140 | mV | |
VOUT ≥ 1.2V, IOUT = 3A, –40°C ≤ TJ ≤ +85°C | 125 | |||||
ILIM | Output current limit | VOUT forced at 0.9 × VOUT(NOM), VOUT(NOM) = 1.5V, VIN = VOUT(NOM) + 400 mV |
3.3 | 3.6 | 3.9 | A |
ISC | Short circuit current limit | RLOAD = 10 mΩ, under foldback operation | 1.1 | A | ||
IGND | GND pin current | IOUT = 3 A, VOUT = 1.5V |
15 | mA | ||
VIN = 1.1 V, IOUT = 3 A, VOUT = 0.5 V | 13 | 15 | 19 | |||
ISDN | Shutdown GND pin current | PG = (open), VIN = 2.2 V, VEN = 0.4 V | 100 | 300 | µA | |
IEN | EN pin current | VIN = 2.2V, 0 V ≤ VEN ≤ 6 V | -5 | 5 | µA | |
VIH(EN) | EN trip point rising (turn-on) | VIN = 1.1 V | 0.62 | 0.65 | 0.68 | V |
VIL(EN) | EN trip point falling (turn-off) | VIN = 1.1 V | 0.58 | 0.61 | 0.64 | V |
VHYS(EN) | EN trip point hysteresis | VIN = 1.1 V | 40 | mV | ||
VIT(PG) | PG pin threshold | For PG transitioning low with falling VOUT, VIN = 1.1 V, VOUT < VIT(PG), IPG = –1 mA (current into device) |
87 | 90 | 93 | % |
VHYS(PG) | PG pin hysteresis | VIN = 1.1 V, VOUT < VIT(PG), IPG = –1 mA (current into device) |
2 | % | ||
VOL(PG) | PG pin low-level output voltage | VIN = 1.1 V, VOUT < VIT(PG), IPG = –1 mA (current into device) |
0.4 | V | ||
ILKG(PG) | PG pin leakage current | VPG = 6 V, VOUT > VIT(PG), VIN = 1.1 V | 1 | µA | ||
PSRR | Power-supply ripple rejection | f = 1 MHz, VIN = 1.8V, VOUT(NOM) = 1.5 V, IOUT = 3 A, CNR = 1 µF | 23 | dB | ||
f = 1 MHz, VIN =1.1 V, VOUT(NOM) = 0.5 V, IOUT = 3 A, CNR = 1 µF | 25 | |||||
Vn | Output noise voltage | BW = 10Hz to 100kHz, 1.1V ≤ VIN ≤ 2.2 V, 0.5V ≤ VOUT ≤ 1.5V, IOUT = 3A, CNR = 1 µF |
8 | µVRMS | ||
Vn | Output noise voltage | BW = 100Hz to 100kHz, 1.1V ≤ VIN ≤ 2.2V, 0.5V ≤ VOUT ≤1.5V, IOUT = 3A, CNR = 1µF |
2.2 | µVRMS | ||
RDIS | Output pin active discharge resistance | VIN = 1.1V, VEN = 0V VOUT = 0.2V | 110 | Ω | ||
RNR_DIS | NR pin active discharge resistance | VIN = 1.1 V, VEN = 0 V, VNR = 0.2V | 250 | Ω | ||
RSS_DIS | SS pin active discharge resistance | VIN = 1.1V, VEN = 0V, VSS = 0.2V | 5.6 | kΩ | ||
TSD(shutdown) | Thermal shutdown temperature | Shutdown, temperature increasing | 165 | °C | ||
TSD(reset) | Thermal shutdown reset temperature | Reset, temperature decreasing | 150 | °C |