SLUSCZ1 May 2017 TPS92518-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
VCCx, VIN | ||||||
VCCx | VCCx Voltage | VVIN = 40 V or VVIN = 65 V, 0 A ≤ External Load ≤ 500 µA | 6.9 | 7.5 | 8.25 | V |
VCCx2 | VCCx Voltage with External Load | External Load = 500 µA | 6.9 | 7.5 | 8.25 | V |
VCCx_UVLO | VCCx undervoltage lockout | Falling threshold, VVIN = 10 V | 5.65 | 5.9 | 6.1 | V |
VCCx_UVHYS | VCCx undervoltage lockout Hysteresis | 0.25 | V | |||
IVCCx-LIM | VCCx regulator current limit | VCC shorted to GND. | 25 | 38 | 48 | mA |
IVIN | Operating Current | Not Switching | 3 | 4 | mA | |
VDO | LDO drop-out voltage | IVCC = 5 mA, VVIN = 5 V | 90 | 225 | mV | |
Peak Current Comparator (CSPx, CSNx) | ||||||
VCSTx | VCSPx-VCSNx peak current threshold | LEDx_PKTH_DAC = 255 | 245 | 255 | 265 | mV |
LEDx_PKTH_DAC = 127 | 118.5 | 127 | 135.5 | mV | ||
LEDx_PKTH_DAC = 10 | 10 | mV | ||||
ICSN | CSN input bias current | 0.4 | 1.5 | µA | ||
tDEL | CSN pin falling delay | CSNx fall to GATEx fall (1V/us stimulus) | 58 | 110 | ns | |
tLEB | Leading edge blanking (minimum on-time) | Minimum Pulse Width | 165 | 200 | 235 | ns |
CSPUVLO | CSPx UVLO Falling Threshold | 4.65 | 4.90 | 5.15 | V | |
CSPUVLO-H | CSPx UVLO Hysteresis | 520 | mV | |||
Gate Drivers (GATEx, SWx and BOOTx) | ||||||
RDSP | GATEx PFET ( RDS High ) | 7.3 | Ω | |||
RDSN | GATEx NFET ( RDS Low ) | 2.8 | Ω | |||
VBOOT-UVLO | Voltage where gate drive is disabled | VBOOT to VSW , VBOOT falling | 3.6 | 4.4 | 5.2 | V |
VBOOT-UVLO-HYS | Hysteresis on BOOTx UVLO | VBOOTx to VSWx | 200 | mV | ||
IPD PWMx | Pull down from SWx when PWMx Low | PWMx low, (BOOTx to SWx) = 5V, VSWx= 8V | 200 | 260 | µA | |
IPD BOOTx | VBOOTx -VSWx < VBOOT-UVLO | PWMx high, (BOOTx to SWx) < BOOT_UVLO, VSWx = 8 V | 5 | 7 | mA | |
IBOOT_Q | BOOTx quiescent current | (BOOTx to SWx) = 5.5 V, 0 V ≤ VSWx ≤ 65 V | 100 | 200 | µA | |
OFF-TIMER | ||||||
tOFF | Off-time | VLEDx = 30 V, tOFFXDAC = 255 | 3.2 | 4.1 | 4.8 | µs |
tD-OFF | COFF threshold to gate rising delay | Specified by design | 50 | ns | ||
tOFF-MAX | Maximum off-time | tOFF-MAXDAC = 255 | 65 | µs | ||
Enable and Input UVLO | ||||||
VEN/UV1 | EN/UV pin threshold | EN/UV pin rising | 1.18 | 1.24 | 1.30 | V |
VEN/UV-HYS1 | EN/UV pin hysteresis | Difference between rising and falling threshold | 100 | mV | ||
tEN/UV1 | EN/UV pin delay | EN/UV pin rising to GATEx pin rising. LEDx_MAXOFF_DAC = 0 | 300 | ns | ||
EN/UV pin falling to GATEx pin falling | 470 | ns | ||||
IEN/UV-HYST1 | EN/UV Hysteresis Current | EN/UV = 2 V | 12 | 16 | 28 | µA |
VEN/UV2 | EN/UV LED1_EN and LED2_EN override threshold | EN/UV pin rising writes LED1_EN and LED2_EN = 1 | 23.4 | V | ||
VEN/UV-HYS2 | EN/UV pin hysteresis | Difference between rising and falling threshold | 3 | V | ||
tEN/UV2 | EN/UV pin delay 2 | EN/UV pin rising to GATEx pin rising. LEDx_MAXOFF_DAC = 0 | 520 | ns | ||
PWM, MOSI, SCK, SSN | ||||||
ILKG | Leakage current | 1 | µA | |||
VIL | Low level input voltage threshold | 0.8 | V | |||
VIH | High level input voltage threshold | 1.8 | V | |||
tPWM | PWM pin delay | PWM pin rising to GATE pin rising | 68 | 105 | ns | |
PWM pin falling to GATE pin falling | 55 | 100 | ns | |||
MISO | ||||||
VOL | MISO low, IMISO applied | IMISO = 10 mA | 0.26 | 0.51 | V | |
RDS | MISO Pull-down resistance | IMISO = 10 mA | 26 | Ω | ||
ADC | ||||||
ADCTEMP | ADC Reading T = –40°C | 104 | Code | |||
ADC Reading T = 25°C | 130 | Code | ||||
ADC Reading T= 150°C | 171 | Code | ||||
ADCLEDx | ADC Reading VLEDx= 60 V | 226 | 230 | 240 | Code | |
ADC Reading VLEDx = 10 V | 37 | 38 | 39 | Code | ||
ADC Reading VLEDx = 1 V | 2 | 3 | 4 | Code | ||
SPI Interface | ||||||
tSS_SU | SSN Setup Time | Falling edge of SSN to 1st SCK rising edge | 500 | ns | ||
tSS_H | SSN Hold Time | Falling edge of 16th SCK to SSN rising edge | 250 | ns | ||
tSCK | SCK Period | Clock period | 500 | ns | ||
DSCK | SCK Duty Cycle | Clock duty cycle | 40 | 60 | % | |
tSU | MOSI Setup Time | MOSI valid to rising edge SCK | 250 | ns | ||
tH | MOSI Hold Time | MOSI valid after rising edge SCK | 275 | ns | ||
tHI_Z | MISO Tri-State Time | Time to tri-state (deactivate low-side switch) MISO after SSN rising edge | 110 | 320 | ns | |
tMISO_HL | MISO Valid High-to-Low | Time to place valid "0" on MISO after falling SCK edge | 320 | ns | ||
tMISO_LH | MISO Valid Low-to-High | Time to tri-state (deactivate the internal low-side switch) MISO after falling SCK edge. tRC is the time added by the application total capacitance and resistance. | 320+tRC | ns | ||
tZO_HL | MISO Drive Time High-to-Low | SSN Falling Edge to MISO Falling | 320 | ns | ||
tSS | SSN High Time | How long SSN must remain high between transactions | 1000 | ns | ||
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown temperature | 175 | °C | |||
TSD HYST | Thermal shutdown hysteresis | 10 |