SLUSEG1A August 2021 – December 2021 TPS92519-Q1
PRODUCTION DATA
The TPS92519-Q1 contains both high-side and low-side N-channel MOSFETs. The high-side gate driver works in conjunction with an internal bootstrap diode and an external bootstrap capacitor, CBST. During the on-time of the low-side MOSFET, the SW pin voltage is approximately 0 V and CBST is charged from the V5D supply through the internal diode. TI recommends a 0.1-µF to 1-µF capacitor connected with short traces between the BST and SW pins. A larger capacitor is required to prevent a bootstrap undervoltage fault when operating at low PWM dimming frequencies.