SLUSBP5E March   2014  – July 2018 TPS92601-Q1 , TPS92602-Q1

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Device Images
      1. 3.1 Typical Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Fixed-Frequency PWM Control
      2. 7.3.2 Slope-Compensation Output Current
      3. 7.3.3 Boost-Current Limit
      4. 7.3.4 Oscillator and PLL
      5. 7.3.5 Control Loop Compensation
      6. 7.3.6 LED Open-Circuit Detection
      7. 7.3.7 Output Short-Circuit and Overcurrent Detection
      8. 7.3.8 Measuring LED Current During a Non-Failure Condition
      9. 7.3.9 LED Dimming Options
        1. 7.3.9.1 Analog Dimming
        2. 7.3.9.2 PWM Dimming
    4. 7.4 Device Functional Modes
      1. 7.4.1 Undervoltage and Overvoltage Shutdown
      2. 7.4.2 Overtemperature Shutdown
      3. 7.4.3 Device State Diagram
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Boost Regulator With Separate or Paralleled Channels
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Switching Frequency
          2. 8.2.1.2.2  Maximum Output-Current Set Point
          3. 8.2.1.2.3  Output Overvoltage-Protection Set Point
          4. 8.2.1.2.4  Duty Cycle Estimation
          5. 8.2.1.2.5  Inductor Selection
          6. 8.2.1.2.6  Rectifier Diode Selection
          7. 8.2.1.2.7  Output Capacitor Selection
          8. 8.2.1.2.8  Input Capacitor Selection
          9. 8.2.1.2.9  Current Sense and Current Limit
          10. 8.2.1.2.10 Switching MOSFET Selection
          11. 8.2.1.2.11 Loop Compensation
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Boost-to-Battery Regulator
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1  Switching Frequency
          2. 8.2.2.2.2  Maximum Output-Current Set Point
          3. 8.2.2.2.3  Output Overvoltage-Protection Set Point
          4. 8.2.2.2.4  Duty Cycle Estimation
          5. 8.2.2.2.5  Inductor Selection
          6. 8.2.2.2.6  Rectifier Diode Selection
          7. 8.2.2.2.7  Output Capacitor Selection
          8. 8.2.2.2.8  Input Capacitor Selection
          9. 8.2.2.2.9  Current Sense and Current Limit
          10. 8.2.2.2.10 Switching MOSFET Selection
          11. 8.2.2.2.11 Loop Compensation
        3. 8.2.2.3 TPS92602y-Q1 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Related Links
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.1.2.10 Switching MOSFET Selection

The TPS92602y-Q1 device drives a ground-referenced N-channel FET. The breakdown voltage is the output voltage plus any voltage spike, with 30% added for a safety margin as shown in Equation 34.

Equation 34. TPS92601-Q1 TPS92602-Q1 eq31_Vbd_SLUSBP5.gif

Select an N-channel FET with breakdown voltage of 50 V.

Estimate the rDS(on) and gate charge based on the desired efficiency target.

Equation 35. TPS92601-Q1 TPS92602-Q1 eq32_Pdiss_SLUSBP5.gif

For a target of 95% efficiency with a 16-V input voltage at 1 A, maximum power dissipation is limited to 1.578 W. The main power-dissipating devices are the MOSFET, inductor, diode, current-sense resistor and the integrated circuit, the TPS92602y-Q1 device.

Equation 36. TPS92601-Q1 TPS92602-Q1 eq33_Pfet_SLUSBP5.gif

This assumption leaves 740 mW of power dissipation for the MOSFET. Allowing half for conduction and half for switching losses, we can determine a target rDS(on) and Q(GS) for the MOSFET by Equation 37 and Equation 38.

Equation 37. TPS92601-Q1 TPS92602-Q1 eq34_Qgs_SLUSBP5.gif

Calculate a target MOSFET gate-to-source charge of less than 29.2 nC to limit the switching losses to less than 250 mW.

Equation 38. TPS92601-Q1 TPS92602-Q1 eq35_rDSon_SLUSBP5.gif

Selecting a target MOSFET rDS(on) of 12 mΩ limits the conduction losses to less than 250 mW.