SLUSCV5 May 2022 TPS92643-Q1
PRODUCTION DATA
The TPS92643-Q1 contains both high-side and low-side N-channel MOSFETs. The high-side gate driver works in conjunction with an internal bootstrap diode and an external bootstrap capacitor, CBST. During the on-time of the low-side MOSFET, the SW pin voltage is approximately 0 V and CBST is charged from the VCC supply through the internal diode and external RBST resistor. TI recommends a 0.1-µF to 2.2-µF capacitor and 2.2-Ω to 10-Ω resistor connected in series between the BST and SW pins.
A larger capacitor is required to prevent a bootstrap undervoltage fault when operating at low PWM dimming frequencies. Noise due to stored charge is reduced by the RBST. In addition, the RBST resistor allows optimization of EMI with respect to efficiency. A larger RBST resistor results in lower SW node rise time and allows energy in SW node harmonics to roll off near 100-MHz frequency. Switching with slower slew rate also decreases the efficiency.