INPUT VOLTAGE (VIN) |
VDO |
LDO dropout voltage |
ICC = 20 mA, VIN = 5 V |
|
300 |
|
mV |
BIAS SUPPLY (VCC) |
VCC(REG) |
Regulation voltage |
No load |
7.0 |
7.5 |
8.0 |
V |
VCC(UVLO) |
Supply undervoltage protection |
VCC rising threshold, VIN = 8 V |
|
4.1 |
4.35 |
V |
VCC falling threshold, VIN = 8 V |
3.75 |
4.0 |
|
V |
Hysteresis |
|
100 |
|
mV |
ICC(LIMIT) |
Supply current limit |
VCC = 0 V |
26 |
38 |
46 |
mA |
ICC(STBY) |
Supply stand-by current |
VPWM = 0 V |
|
1.8 |
2.1 |
mA |
ICC(SW) |
Supply switching current |
VCC = 7.5 V, CGATE = 1 nF |
|
5.1 |
6.6 |
mA |
OSCILLATOR (RT/SYNC) |
ƒSW |
Switching frequency |
RT = 40 kΩ |
165 |
200 |
230 |
kHz |
RT = 20 kΩ |
327 |
390 |
448 |
kHz |
VRT |
RT output voltage |
|
|
1 |
|
V |
VSYNC |
SYNC rising threshold |
VRT/SYNC rising |
|
2.7 |
3.1 |
V |
SYNC falling threshold |
VRT/SYNC falling |
1.8 |
2 |
|
V |
tSYNC(MIN) |
Minimum SYNC clock pulse width |
|
|
100 |
|
ns |
GATE DRIVER (GATE) |
RGH |
Gate driver high side resistance |
IGATE = –10 mA |
|
5.4 |
11.2 |
Ω |
RGL |
Gate driver low side resistance |
IGATE = 10 mA |
|
4.3 |
10.5 |
Ω |
CURRENT SENSE (IS) |
VIS(LIMIT) |
Current limit threshold |
|
497 |
525 |
550 |
mV |
tIS(BLANK) |
Leading edge blanking time |
|
103 |
150 |
188 |
ns |
tIS(FAULT) |
Current limit fault time |
|
|
35 |
|
µs |
tILMT(DLY) |
IS to GATE propagation delay |
VIS pulsed from 0 to 1 V |
|
100 |
|
ns |
PWM COMPARATOR AND SLOPE COMPENSATION |
DMAX |
Maximum duty cycle |
|
90.4% |
93% |
94.7% |
|
VLV |
IS to COMP level shift voltage |
No slope compensation added |
1.17 |
1.5 |
1.8 |
V |
VSL |
Slope compensation |
D = DMAX (with max slope compensation) |
|
200 |
|
mV |
ILV |
IS level shift bias current |
No slope compensation added |
|
25 |
|
µA |
ILV + ISL |
IS level shift source current |
D = DMAX (with max slope compensation) |
|
115 |
|
µA |
CURRENT SENSE AMPLIFIER (CSP, CSN) |
VCS(offset) |
Cumulative offset voltage at VCSP = 60 V and V(CSP-CSN) = 150 mV, referred to current sense input |
–40°C ≤ TJ ≤ 140°C |
–5.2 |
|
5.9 |
mV |
25°C ≤ TJ ≤ 140°C |
–4.4 |
|
4.6 |
mV |
Cumulative offset voltage at VCSP = 60 V and V(CSP-CSN) = 10 mV, referred to current sense input |
–40°C ≤ TJ ≤ 140°C |
–3.5 |
|
5.0 |
mV |
25°C ≤ TJ ≤ 140°C |
-2.8 |
|
4.0 |
mV |
Cumulative offset voltage at VCSN = 0 V and V(CSP-CSN) = 150 mV, referred to current sense input |
–40°C ≤ TJ ≤ 140°C |
–5.9 |
|
6.7 |
mV |
25°C ≤ TJ ≤ 140°C |
-4.7 |
|
5.0 |
mV |
Cumulative offset voltage at VCSN = 0 V and V(CSP-CSN) = 10 mV, referred to current sense input |
–40°C ≤ TJ ≤ 140°C |
–2.3 |
|
3.2 |
mV |
25°C ≤ TJ ≤ 140°C |
–1.7 |
|
2.6 |
mV |
CS(BW) |
Current sense unity gain bandwidth |
|
|
500 |
|
kHz |
ICS(BIAS) |
CSP, CSN bias current |
VCSP, CSN = 60 V |
|
4 |
|
µA |
CURRENT MONITOR (IMON) |
VIMON(CLP) |
IMON output voltage clamp |
|
3.2 |
3.7 |
4.2 |
V |
VIMON(OS) |
IMON buffer offset voltage |
|
–11.4 |
–1.6 |
7.3 |
mV |
ANALOG ADJUST (IADJ) |
VIADJ(CLP) |
IADJ internal clamp voltage |
IIADJ = 1 µA |
2.27 |
2.42 |
2.55 |
V |
IIADJ(BIAS) |
IADJ input bias current |
VIADJ < 2.2 V |
|
|
90 |
nA |
RIADJ(LMT) |
IADJ current limiting series resistor |
VIADJ > 2.6 V |
|
12 |
|
kΩ |
ERROR AMPLIFIER (COMP) |
gM |
Transconductance |
|
|
121 |
|
µA/V |
ICOMP(SRC) |
COMP current source capacity |
VIADJ = 1.4 V, V(CSP-CSN) = 0 V |
|
130 |
|
µA |
ICOMP(SINK) |
COMP current sink capacity |
VIADJ = 0 V, V(CSP-CSN) = 0.1 V |
|
130 |
|
µA |
EA(BW) |
Error amplifier bandwidth |
–3 dB |
|
5 |
|
MHz |
VCOMP(RST) |
COMP pin reset voltage |
|
|
100 |
|
mV |
RCOMP(DCH) |
COMP discharge FET resistance |
|
|
246 |
|
Ω |
SOFT-START (SS) |
ISS |
Soft-start source current |
|
7 |
10 |
12.8 |
µA |
VSS(RST) |
Soft-start pin reset voltage |
|
|
25 |
|
mV |
RSS(DCH) |
SS discharge FET resistance |
|
|
260 |
|
Ω |
OVERVOLTAGE PROTECTION (OVP) |
VOVP(THR) |
OVP detection threshold |
|
1.18 |
1.24 |
1.31 |
V |
IOVP(HYS) |
OVP hysteresis current |
|
12 |
20 |
27.5 |
µA |
PWM INPUT (PWM) |
VPWM(HIGH) |
Schmitt trigger logic level (high threshold) |
|
|
2.5 |
2.7 |
V |
VPWM(LOW) |
Schmitt trigger logic level (low threshold) |
|
2.0 |
2.3 |
|
V |
RPWM(PD) |
PWM pulldown resistance |
|
|
1 |
|
MΩ |
tDLY(RISE) |
PWM to DDRV rising delay |
|
|
54 |
|
ns |
tDLY(FALL) |
PWM to DDRV falling delay |
|
|
72 |
|
ns |
PWM GATE DRIVE OUTPUT (DDRV) |
RDH |
DDRV high-side resistance |
|
|
6.1 |
12.8 |
Ω |
RDL |
DDRV low-side resistance |
|
|
5.2 |
11.4 |
Ω |
THERMAL SHUTDOWN |
|
Thermal shutdown temperature |
|
|
175 |
|
°C |
|
Thermal shutdown hysteresis |
|
|
25 |
|
°C |