SNVSCB8A march   2023  – april 2023 TPSF12C3

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 System Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Active EMI Filtering
        1. 8.3.1.1 Schematics
      2. 8.3.2 Capacitive Amplification
      3. 8.3.3 Integrated Line Rejection Filter
      4. 8.3.4 Compensation
      5. 8.3.5 Remote Enable
      6. 8.3.6 Supply Voltage UVLO Protection
      7. 8.3.7 Thermal Shutdown Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – AEF Circuit for Grid Infrastructure Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Sense Capacitors
          2. 9.2.1.2.2 Inject Capacitor
          3. 9.2.1.2.3 Compensation Network
          4. 9.2.1.2.4 Injection Network
          5. 9.2.1.2.5 Surge Protection
        3. 9.2.1.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information
9.2.1.2.3 Compensation Network

The CM noise signal derived from the internal sensing filter and summation network of the TPSF12C3 is internally inverted and amplified by a gain stage. The components between the COMP1 and COMP2 pins of the IC, designated as as RG, CG1 and CG2 in Figure 9-2, set the gain characteristic.

More specifically, resistor RG establishes a high midband AEF gain at frequencies where EMI filtering is required. Capacitor CG1 increases the impedance of that branch at low frequencies, which sets a lower AEF amplifer gain to further reject line-frequency components appearing at the INJ output. Capacitor CG2 preserves gain at high frequencies, which extends the AEF bandwidth.

Choose a value for RG between 1 kΩ and 2 kΩ. A resistance of 1.5 kΩ is a common choice and selected in this example to set a midband gain of 50 dB. Choose capacitances for CG1 and CG2 of 10 nF and 10 pF, respectively, which establishes a gain rolloff below approximately 10 kHz for line- and low-frequency attenuation.