SNVSCB8A march   2023  – april 2023 TPSF12C3

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 System Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Active EMI Filtering
        1. 8.3.1.1 Schematics
      2. 8.3.2 Capacitive Amplification
      3. 8.3.3 Integrated Line Rejection Filter
      4. 8.3.4 Compensation
      5. 8.3.5 Remote Enable
      6. 8.3.6 Supply Voltage UVLO Protection
      7. 8.3.7 Thermal Shutdown Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Shutdown Mode
      2. 8.4.2 Active Mode
  9. 9 Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Design 1 – AEF Circuit for Grid Infrastructure Applications
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Sense Capacitors
          2. 9.2.1.2.2 Inject Capacitor
          3. 9.2.1.2.3 Compensation Network
          4. 9.2.1.2.4 Injection Network
          5. 9.2.1.2.5 Surge Protection
        3. 9.2.1.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Device Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Development Support
    2. 10.2 Documentation Support
      1. 10.2.1 Related Documentation
    3. 10.3 Receiving Notification of Documentation Updates
    4. 10.4 Support Resources
    5. 10.5 Trademarks
    6. 10.6 Electrostatic Discharge Caution
    7. 10.7 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.1.3 Application Curves

Unless otherwise indicated, VVDD = VEN = 12 V.

GUID-20230316-SS0I-QZDR-3TLC-NTSZPJHLWCPX-low.svg
Note: A high DM noise signature may mask improvement in CM noise performance related to AEF. A reduction of CM choke inductance may also reduce leakage inductance, which could impact DM noise attenuation. Install higher X-capacitance or a discrete DM filter inductor to manage DM attenuation as needed. Also, use a DM-CM noise splitter to isolate the CM component of the measured total noise.
Figure 9-5 CISPR 32 Class B EMI Mitigation Result with AEF On and Off (EN Tied High and Low)
GUID-20221222-SS0I-SM06-21XF-MLH6LR73WKPN-low.svg Figure 9-6 IEC 61000-4-5 Positive Surge, 5-kV Single Strike – 1 µs/div (a), 200 µs/div (b)
GUID-20221222-SS0I-XBBN-WSNJ-DSFCNC2HNCVW-low.svg Figure 9-7 IEC 61000-4-5 Negative Surge, 5-kV Single Strike – 1 µs/div (a), 200 µs/div (b)
GUID-20221222-SS0I-BKHH-PQSD-LF5BMDNCDHNF-low.svg Figure 9-8 IEC 61000-4-5 Surge, 5-kV Repetitive Strike at 10-Second Intervals – Positive (a), Negative (b)

Note: The surge test circuit used MOVs (Littelfuse V20E300P) connected from line and neutral filter inputs to chassis ground. See Figure 9-11.