SLVSGO9C april   2022  – august 2023 TPSI3050

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety-Related Certifications
    8. 6.8  Safety Limiting Values
    9. 6.9  Electrical Characteristics
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristic Curves
    12. 6.12 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Transmission of the Enable State
      2. 8.3.2 Power Transmission
      3. 8.3.3 Gate Driver
      4. 8.3.4 Modes Overview
      5. 8.3.5 Three-Wire Mode
      6. 8.3.6 Two-Wire Mode
      7. 8.3.7 VDDP, VDDH, and VDDM Undervoltage Lockout (UVLO)
      8. 8.3.8 Power Supply and EN Sequencing
      9. 8.3.9 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Two-Wire or Three-Wire Mode Selection
        2. 9.2.2.2 Standard Enable, One-Shot Enable
        3. 9.2.2.3 CDIV1, CDIV2 Capacitance
        4. 9.2.2.4 RPXFR Selection
        5. 9.2.2.5 CVDDP Capacitance
        6. 9.2.2.6 Gate Driver Output Resistor
        7. 9.2.2.7 Start-up Time and Recovery Time
        8. 9.2.2.8 Supplying Auxiliary Current, IAUX From VDDM
        9. 9.2.2.9 VDDM Ripple Voltage
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Related Links
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.3.3 Gate Driver

The TPSI3050 and TPSI3050S have an integrated gate driver that provides a nominal 10-V gate voltage with 1.5/3.0-A peak source and sink current sufficient for driving many power transistors or Silicon-Controlled Rectifiers (SCR). When driving external power transistors, TI recommends bypass capacitors (CDIV = CDIV1 = CDIV2) from VDDH to VDDM and VDDM to VSSS of 20 times the equivalent gate capacitance.

The gate driver also includes an active clamp keep off circuit. This feature helps to keep the driver output, VDRV, low should power be lost on the secondary supply rails e.g. power loss on the VDDP supply prevents power transfer. Should power be lost, the active clamp keep off circuit will attempt to clamp the voltage of VDRV to under 2 V relative to VSSS.