SLUSEO6B may   2023  – july 2023 TPSM843B22

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  VIN Pins and VIN UVLO
      2. 7.3.2  Internal Bypassing (BP5)
      3. 7.3.3  Enable and Adjustable UVLO
        1. 7.3.3.1 Internal Sequence of Events During Start-up
      4. 7.3.4  Switching Frequency Selection
      5. 7.3.5  Switching Frequency Synchronization to an External Clock
        1. 7.3.5.1 Internal PWM Oscillator Frequency
        2. 7.3.5.2 Loss of Synchronization
        3. 7.3.5.3 Interfacing the SYNC/FSEL Pin
      6. 7.3.6  Remote Sense Amplifier and Adjusting the Output Voltage
      7. 7.3.7  Loop Compensation Guidelines
        1. 7.3.7.1 Output Filter Inductor Tradeoffs
        2. 7.3.7.2 Ramp Capacitor Selection
        3. 7.3.7.3 Output Capacitor Selection
        4. 7.3.7.4 Design Method for Good Transient Response
      8. 7.3.8  Soft Start and Prebiased Output Start-up
      9. 7.3.9  MSEL Pin
      10. 7.3.10 Power Good (PG)
      11. 7.3.11 Output Overload Protection
        1. 7.3.11.1 Positive Inductor Current Protection
        2. 7.3.11.2 Negative Inductor Current Protection
      12. 7.3.12 Output Overvoltage and Undervoltage Protection
      13. 7.3.13 Overtemperature Protection
      14. 7.3.14 Output Voltage Discharge
    4. 7.4 Device Functional Modes
      1. 7.4.1 Forced Continuous-Conduction Mode
      2. 7.4.2 Discontinuous Conduction Mode During Soft Start
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 1.0-V Output, 1-MHz Application
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1  Switching Frequency
          2. 8.2.1.2.2  Output Inductor Selection
          3. 8.2.1.2.3  Output Capacitor
          4. 8.2.1.2.4  Input Capacitor
          5. 8.2.1.2.5  Adjustable Undervoltage Lockout
          6. 8.2.1.2.6  Output Voltage Resistors Selection
          7. 8.2.1.2.7  Bootstrap Capacitor Selection
          8. 8.2.1.2.8  BP5 Capacitor Selection
          9. 8.2.1.2.9  PG Pullup Resistor
          10. 8.2.1.2.10 Current Limit Selection
          11. 8.2.1.2.11 Soft-Start Time Selection
          12. 8.2.1.2.12 Ramp Selection and Control Loop Stability
          13. 8.2.1.2.13 MSEL Pin
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
      3. 8.4.3 Thermal Performance
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.11.1 Positive Inductor Current Protection

Current is sensed in the high-side MOSFET while it is conducting after a short blanking time to allow noise to settle. Whenever the high-side overcurrent threshold is exceeded, the high-side MOSFET is immediately turned off and the low-side MOSFET is turned on. The high-side MOSFET does not turn back on until the current falls below the low-side MOSFET overcurrent threshold, effectively limiting the peak current in the case of a short-circuit condition. If a high-side overcurrent is detected for 15 consecutive cycles, the device enters hiccup mode.

The current is also sensed in the low-side MOSFET while it is conducting after a short blanking time to allow noise to settle. If the low-side overcurrent threshold is exceeded when the next incoming PWM signal is received from the controller, the device skips processing that PWM pulse. The device does not turn the high-side MOSFET on again until the low-side overcurrent threshold is no longer exceeded. If the low-side overcurrent threshold remains exceeded for 15 consecutive cycles, the device enters hiccup. There are two separate counters for the high-side and low-side overcurrent events. If the off time is too short, the low-side overcurrent can not trip. The low-side overcurrent, however, begins tripping after the high-side peak overcurrent limit is crossed, as exceeding the peak current limit shortens the on time and lengthens the off time.

Both the high-side and low-side positive overcurrent thresholds are programmable using the MSEL pin. Two sets of thresholds are available ("High" and "Low"), which are summarized in Table 7-6. The values for these thresholds are obtained using open-loop measurements with a DC current to accurately specify the values. In real applications, the inductor current ramps and the ramp rate is a function of the voltage across the inductor (VIN – VOUT) as well as the inductance value. The ramp rate combined with delays in the current sense circuitry then results in slightly different values than specified. The current at which the high-side overcurrent limit takes effect can be slightly higher than specified, and the current at which the low-side overcurrent limit takes effect can be slightly lower than specified.

Table 7-6 Overcurrent Thresholds
MSEL Current Limit SettingHigh-Side Overcurrent Typical Value (A)Low-Side Overcurrent Typical Value (A)
High

29

22

Low

23

17.6