SBOSAE2 June   2024 TRF0208-SP

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Fully-Differential Amplifier
      2. 6.3.2 Single Supply Operation
    4. 6.4 Device Functional Modes
      1. 6.4.1 Power Down Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Driving a High-Speed ADC
      2. 7.1.2 Calculating Output Voltage Swing
      3. 7.1.3 Thermal Considerations
    2. 7.2 Typical Applications
      1. 7.2.1 TRF0208-SP in Receive Chain
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Package Option Addendum
    2. 10.2 Mechanical Data

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RPV|12
Thermal pad, mechanical data (Package|Pins)

1 Features

  • Standard microcircuit drawing (SMD), 5962-24202
  • Radiation:
    • Total ionizing dose (TID)
      • Radiation hardness assurance (RHA) up to 100krad (Si) TID
      • Enhanced low dose rate sensitivity (ELDRS) free process
      • High dose rate radiation lot acceptance testing (HDR RLAT) up to 100krad (Si) TID
    • Single event effects (SEE)
      • Single event latch-up (SEL) immune to linear energy transfer (LET) of
        75MeV-cm2/mg
      • Single event transient (SET) characterized to LET of 75MeV‑cm2/mg
  • Space-grade QMLP
    • Lead-free construction
    • Extended temperature range: –55°C to +125°C
  • Excellent performance driving RF ADCs
  • Fixed power gain of 16dB in single-ended-to-differential mode
  • Bandwidth: 11GHz, 3dB
  • Gain flatness: 8GHz, 1dB
  • OIP3: 36dBm (2GHz), 32dBm (6GHz)
  • P1dB: 14.5dBm (2GHz), 11dBm (6GHz)
  • NF: 6.8dB (2GHz), 6.8dB (6GHz)
  • Gain and phase imbalance: ±0.3dB and ±3º
  • Power-down feature
  • Single-supply operation: 3.3V
  • Active current: 138mA