SBOS972C october   2021  – august 2023 TRF1208

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: TRF1208
    6. 6.6 Electrical Characteristics: TRF1208B
    7. 6.7 Typical Characteristics: TRF1208
    8. 6.8 Typical Characteristics: TRF1208B
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Fully-Differential Amplifier
      2. 7.3.2 Single Supply Operation
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Down Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Driving a High-Speed ADC
      2. 8.1.2 Calculating Output Voltage Swing
      3. 8.1.3 Thermal Considerations
    2. 8.2 Typical Applications
      1. 8.2.1 TRF1208 in Receive Chain
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
      2. 8.2.2 TRF1208 in a Transmit Chain
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) TRF1208x UNIT
RPV (WQFN)
12 PINS
RθJA Junction-to-ambient thermal resistance 66.9 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 64.3 °C/W
RθJB Junction-to-board thermal resistance 17.4 °C/W
ΨJT Junction-to-top characterization parameter 1.7 °C/W
ΨJB Junction-to-board characterization parameter 17.2 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 9.0 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.