SLWS223B August   2011  – November 2015 TRF3705

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Electrical Characteristics: General
    6. 6.6  Electrical Characteristics
    7. 6.7  Typical Characteristics: Single-Tone Baseband
    8. 6.8  Typical Characteristics: Two-Tone Baseband
    9. 6.9  Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration
    10. 6.10 Typical Characteristics: No Baseband
    11. 6.11 Typical Characteristics: Two-Tone Baseband
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Gain Control Feature
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power Down Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Baseband Inputs
        2. 8.2.2.2 LO Input
        3. 8.2.2.3 RF Output
        4. 8.2.2.4 350-MHz Operation
        5. 8.2.2.5 DAC to Modulator Interface Network
        6. 8.2.2.6 DAC348x with TRF3705 Modulator Performance
          1. 8.2.2.6.1 WCDMA
          2. 8.2.2.6.2 LTE
          3. 8.2.2.6.3 MC-GSM
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Definition of Specifications
        1. 11.1.1.1 Carrier Feedthrough
        2. 11.1.1.2 Sideband Suppression
        3. 11.1.1.3 Output Noise
        4. 11.1.1.4 Definition of Terms
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

Over operating free-air temperature range (unless otherwise noted).
MIN MAX UNIT
Supply voltage range(2) –0.3 6 V
Digital I/O voltage range –0.3 VCC + 0.5 V
Operating virtual junction temperature range, TJ –40 150 °C
Operating ambient temperature range, TA –40 85 °C
Storage temperature range, Tstg –65 150 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted).
MIN NOM MAX UNIT
VCC Power-supply voltage 3.15 3.3 3.6 V

6.4 Thermal Information

THERMAL METRIC(1) TRF3705 UNIT
RGE (VQFN)
24 PINS
RθJA Junction-to-ambient thermal resistance 38.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 42.5 °C/W
RθJB Junction-to-board thermal resistance 16.6 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 16.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.6 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics: General

Over recommended operating conditions; at power supply = 3.3 V and TA = +25°C, unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
DC PARAMETERS
ICC Total supply current TA = +25°C, device on (PD = low) 306 mA
TA = +25°C, device off (PD = high) 35 μA
LO INPUT
fLO LO low frequency 300 MHz
LO high frequency 4000 MHz
LO input power –10 0 +15 dBm
BASEBAND INPUTS
VCM I and Q input dc common-mode voltage 0.25 0.5 V
BW 1-dB input frequency bandwidth 1000 MHz
ZI Input impedance Resistance 8 kΩ
Parallel capacitance 4.6 pF
POWER ON/OFF
Turn on time PD = low to 90% final output power 0.2 μs
Turn off time PD = high to initial output power –30 dB 0.2 μs
DIGITAL INTERFACE
VIH PD high-level input voltage 2 V
VIL PD low-level input voltage 0.8 V

6.6 Electrical Characteristics

Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matching circuit, unless otherwise noted.
PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT
fLO = 400 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low –4.7 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high –1.9 dB
POUT Output power GC set low –0.7 dBm
GC set high 2.1 dBm
P1dB Output compression point GC set low 8.5 dBm
GC set high 9.1 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 26 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.4 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 60.2 dBm
Measured at fLO + (fBB1± fBB2), GC set high 61.9 dBm
SBS Unadjusted sideband suppression –57.4 dBc
CF Unadjusted carrier feedthrough Measured at LO frequency –51.6 dBm
Measured at 2 x LO –50 dBm
Measured at 3 x LO –49 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –166.7 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –67 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –64 dBc
fLO = 750 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low 0.2 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high 3.0 dB
POUT Output power GC set low 4.2 dBm
GC set high 7 dBm
P1dB Output compression point GC set low 13.3 dBm
GC set high 13.9 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.5 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.8 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 73.6 dBm
Measured at fLO + (fBB1± fBB2), GC set high 80.5 dBm
SBS Unadjusted sideband suppression –45.2 dBc
CF Unadjusted carrier feedthrough Measured at LO frequency –45.7 dBm
Measured at 2 x LO –46 dBm
Measured at 3 x LO –53.5 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –159.9 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –70 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –66 dBc
fLO = 900 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low 0.3 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high 3.1 dB
POUT Output power GC set low 4.3 dBm
GC set high 7.1 dBm
P1dB Output compression point GC set low 13.2 dBm
GC set high 13.7 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.7 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.9 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 71.5 dBm
Measured at fLO + (fBB1± fBB2), GC set high 75.3 dBm
SBS Unadjusted sideband suppression –43.8 dBc
CF Unadjusted carrier feedthrough Measured at LO frequency –48.5 dBm
Measured at 2 x LO –53 dBm
Measured at 3 x LO –50 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –157.9 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –80 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –65 dBc
fLO = 1840 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low –0.1 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high 2.5 dB
POUT Output power GC set low 3.9 dBm
GC set high 6.5 dBm
P1dB Output compression point GC set low 13.2 dBm
GC set high 13.6 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 32.1 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 30.3 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 60.8 dBm
Measured at fLO + (fBB1± fBB2), GC set high 62 dBm
SBS Unadjusted sideband suppression –43.4 dBc
CF Unadjusted carrier feedthrough Measured at LO frequency –42.4 dBm
Measured at 2 x LO –41 dBm
Measured at 3 x LO –53 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –158.8 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –69 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –80 dBc
fLO = 2140 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low 0.1 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high 2.9 dB
POUT Output power GC set low 4.1 dBm
GC set high 6.9 dBm
P1dB Output compression point GC set low 13.1 dBm
GC set high 13.5 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 28.6 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.6 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 65.5 dBm
Measured at fLO + (fBB1± fBB2), GC set high 68.2 dBm
SBS Unadjusted sideband suppression –45.6 dBc
CF Unadjusted carrier feedthrough Measured at LO frequency –39.3 dBm
Measured at 2 x LO –37 dBm
Measured at 3 x LO –46 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –160.0 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –61 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –60 dBc
fLO = 2600 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low –0.8 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high 2 dB
POUT Output power GC set low 3.2 dBm
GC set high 5.6 dBm
P1dB Output compression point GC set low 12.5 dBm
GC set high 12.8 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 28 dBm
FfBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.2 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 67.9 dBm
Measured at fLO + (fBB1± fBB2), GC set high 66.4 dBm
SBS Unadjusted sideband suppression –52.9 dBm
CF Unadjusted carrier feedthrough Measured at LO frequency –37.8 dBm
Measured at 2 x LO –41 dBm
Measured at 3 x LO –42 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –160.6 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –67 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –59 dBc
fLO = 3500 MHz
G Voltage gain Output RMS voltage over input I (or Q) RMS voltage, GC set low –1 dB
Output RMS voltage over input I (or Q) RMS voltage, GC set high 1.8 dB
POUT Output power GC set low 3 dBm
GC set high 5.8 dBm
P1dB Output compression point GC set low 12.1 dBm
GC set high 12.3 dBm
IP3 Output IP3 fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 23.8 dBm
fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.3 dBm
IP2 Output IP2 Measured at fLO + (fBB1± fBB2), GC set low 47.8 dBm
Measured at fLO + (fBB1± fBB2), GC set high 48.6 dBm
SBS Unadjusted sideband suppression –45.2 dBm
CF Unadjusted carrier feedthrough Measured at LO frequency –31.6 dBm
Measured at 2 x LO –30 dBm
Measured at 3 x LO –53 dBm
Output noise floor DC only to BB inputs; 10-MHz offset from LO –160.6 dBm/Hz
HD2BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(2 x fBB) –54 dBc
HD3BB Baseband harmonics Measured with ±1-MHz tone at 0.5 VPP each at fLO ±(3 x fBB) –50 dBc

6.7 Typical Characteristics: Single-Tone Baseband

VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1-VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
TRF3705 G0002_SLWS223A.png Figure 1. Output Power vs LO Frequency (fLO) and Temperature
TRF3705 G0004_SLWS223A.png Figure 3. Output Power vs LO Frequency (fLO) Over LO Drive Level
TRF3705 G0066_SLWS223A.png Figure 5. Output Power vs LO Frequency (fLO) and Temperature at VCM = 0.5 V
TRF3705 G0006_SLWS223A.png Figure 7. P1dB vs LO Frequency (fLO) and Temperature
TRF3705 G0008_SLWS223A.png Figure 9. P1dB vs LO Frequency (fLO) and LO Drive Level
TRF3705 G0010_SLWS223A.png Figure 11. P1dB vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V
TRF3705 G0003_SLWS223A.png Figure 2. Output Power vs LO Frequency (fLO) and Supply Voltage
TRF3705 G0005_SLWS223A.png Figure 4. Output Power vs LO Frequency (fLO) and Gain Select Setting
TRF3705 G001_SLWS223A.png Figure 6. Output Power vs Baseband Voltage at 2140 MHz
TRF3705 G0007_SLWS223A.png Figure 8. P1dB vs LO Frequency (fLO) and Supply Voltage
TRF3705 G0009_SLWS223A.png Figure 10. P1dB vs LO Frequency (fLO) and Gain Select Setting

6.8 Typical Characteristics: Two-Tone Baseband

VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
TRF3705 G0011_SLWS223A.png Figure 12. OIP3 vs LO Frequency (fLO) and Temperature
TRF3705 G0013_SLWS223A.png Figure 14. OIP3 vs LO Frequency (fLO) and LO Drive Level
TRF3705 G0014_SLWS223A.png Figure 16. OIP3 vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V
TRF3705 G0017_SLWS223A.png Figure 18. OIP2 vs LO Frequency (fLO) and Supply Voltage
TRF3705 G0020_SLWS223A.png Figure 20. OIP2 vs LO Frequency (fLO) and Gain Select Setting
TRF3705 G0021_SLWS223A.png Figure 22. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Temperature
TRF3705 G0023_SLWS223A.png Figure 24. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and LO Drive Level
TRF3705 G0024_SLWS223A.png Figure 26. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Temperature at VCM = 0.5 V
TRF3705 G0026_SLWS223A.png Figure 28. Unadjusted Sideband Suppression vs LO Frequency (fLO) and Temperature
TRF3705 G0028_SLWS223A.png Figure 30. Unadjusted Sideband Suppression vs LO Frequency (fLO) and LO Drive Level
TRF3705 G0029_SLWS223A.png Figure 32. Unadjusted sideband Suppression vs LO Frequency (fLO) and Temperature at VCM = 0.5 V
TRF3705 G0012_SLWS223A.png Figure 13. OIP3 vs LO FRequency (fLO) anD Supply Voltage
TRF3705 G0015_SLWS223A.png Figure 15. OIP3 vs LO Frequency (fLO) And Gain Select Setting
TRF3705 G0016_SLWS223A.png Figure 17. OIP2 vs LO Frequency (fLO) and Temperature
TRF3705 G0018_SLWS223A.png Figure 19. OIP2 vs LO Frequency (fLO) and LO Drive Level
TRF3705 G0019_SLWS223A.png Figure 21. OIP2 vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V
TRF3705 G0022_SLWS223A.png Figure 23. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Supply Voltage
TRF3705 G0025_SLWS223A.png Figure 25. Unadjusted Carrier Feedthrough vs LO Frequency (fLO) and Gain Select Setting
TRF3705 G060_SLWS223A.png Figure 27. Carrier Feedthrough vs LO Frequency (fLO) and Temperature After Nulling at 25°C; Multiple Devices
TRF3705 G0027_SLWS223A.png Figure 29. Unadjusted Sideband Suppression vs LO Frequency (fLO) and Supply Voltage
TRF3705 G0030_SLWS223A.png Figure 31. Unadjusted Sideband Suppression vs LO Frequency (fLO) and Gain Select Setting

6.9 Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration

VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted. Single point adjustment mid-band.
TRF3705 G0036_SLWS223A.png Figure 33. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (750 LTE Band)
TRF3705 G0038_SLWS223A.png Figure 35. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (PCS Band)
TRF3705 G0040_SLWS223A.png Figure 37. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (2.6 GHz LTE Band)
TRF3705 G0042_SLWS223A.png Figure 39. Adjusted Sideband Suppression vs LO Frequency and Temperature (750 LTE Band)
TRF3705 G0044_SLWS223A.png Figure 41. Adjusted Sideband Suppression vs LO Frequency and Temperature (PCS Band)
TRF3705 G0046_SLWS223A.png Figure 43. Adjusted Sideband Suppression vs LO Frequency and Temperature (2.6 GHz LTE Band)
TRF3705 G0037_SLWS223A.png Figure 34. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (GSM900 Band)
TRF3705 G0039_SLWS223A.png Figure 36. Adjusted carrier Feedthrough vs LO Frequency and Temperature (UMTS Band)
TRF3705 G0041_SLWS223A.png Figure 38. Adjusted Carrier Feedthrough vs LO Frequency and Temperature (WiMAX/LTE Band)
TRF3705 G0043_SLWS223A.png Figure 40. Adjusted Sideband Suppression vs LO Frequency and Temperature (GSM900 Band)
TRF3705 G0045_SLWS223A.png Figure 42. Adjusted Sideband Suppression vs LO Frequency and Temperature (UMTS Band)
TRF3705 G0047_SLWS223A.png Figure 44. Adjusted Sideband Suppression vs LO Frequency and Temperature (WiMAX/LTE Band)

6.10 Typical Characteristics: No Baseband

VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unless otherwise noted.
TRF3705 G0031_SLWS223A.png Figure 45. Output noisE vs LO Frequency (fLO) and Temperature
TRF3705 G0033_SLWS223A.png Figure 47. Output Noise vs LO Frequency (fLO) AND LO Drive Level
TRF3705 G0034_SLWS223A.png Figure 49. Output Noise vs Output Power
TRF3705 G0032_SLWS223A.png Figure 46. Output Noise vs LO Frequency (fLO) and Supply Voltage
TRF3705 G0035_SLWS223A.png Figure 48. OUtput Noise vs LO Frequency (fLO) and Gain Select Setting

6.11 Typical Characteristics: Two-Tone Baseband

VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Q amplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.
TRF3705 G0048_SLWS223A.png Figure 50. RF Harmonics vs LO FRequency (fLO)
TRF3705 G065_SLWS223A.png Figure 52. Nominal Current Consumption Distribution
TRF3705 G064_SLWS223A.png Figure 54. Current Consumption Distribution Over VCC
TRF3705 G051_SLWS223A.png Figure 56. OIP2 Distribution at fLO = 2140 MHz
TRF3705 G053_SLWS223A.png Figure 58. Unadjusted Sideband Suppression DIstribution at fLO = 2140 MHz
TRF3705 G055_SLWS223A.png Figure 60. OIP3 Distribution at fLO = 900 MHz
TRF3705 G057_SLWS223A.png Figure 62. P1dB distribution at fLO = 900 MHz, fBB = 5.5 MHz
TRF3705 G059_SLWS223A.png Figure 64. Unadjusted Carrier Feedthrough Distribution at fLO = 900 MHz
TRF3705 G0049_SLWS223A.png Figure 51. LO Harmonics vs LO Frequency (fLO)
TRF3705 G063_SLWS223A.png Figure 53. Current Consumption Distribution Over Temperature
TRF3705 G050_SLWS223A.png Figure 55. OIP3 Distribution at fLO = 2140 MHz
TRF3705 G052_SLWS223A.png Figure 57. P1dB Distribution at fLO = 2140 MHz, fBB = 5.5 MHz
TRF3705 G054_SLWS223A.png Figure 59. Unadjusted Carrier Feedthrough Distribution at fLO = 2140 MHz
TRF3705 G056_SLWS223A.png Figure 61. OIP2 Distribution at fLO = 900 MHz
TRF3705 G058_SLWS223A.png Figure 63. Unadjusted Sideband Suppression Distribution at fLO = 900 MHz