The TRF37x32 is a wideband dual down converter mixer with integrated IF amplifier. The device employs integrated baluns for single ended RF and LO inputs. The IF amplifier operates from 30 MHz to 600 MHz in an open collector topology to support a variety of IF frequencies and bandwidths. The TRF37x32 provides excellent mixer linearity and noise performance and offers good isolation between channels for operation with diversity applications. The device operates with low power dissipation and further provides an option for a low power mode for power sensitive applications. Each channel can be independently powered down with fast response times to allow operation in time domain duplexed (TDD) applications.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TRF37A32 | WQFN (32) | 5.00mm x 5.00mm |
TRF37B32 | ||
TRF37C32 |
Changes from * Revision (May 2014) to A Revision
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
PDA | 1 | Digital Input | Power down for channel A (1 = PD; 0 or open = powered) |
RFINA | 2 | Analog Input | RF input for channel A |
NC | 3 | N/A | No connect |
VCC_LO | 4 | Supply | VCC supply for the LO circuitry |
REXT | 5 | Bias | External bias resistor |
NC | 6 | N/A | No connect |
RFINB | 7 | Analog Input | RF input for channel B |
PDB | 8 | Digital Input | Power down for channel B (1 = PD; 0 or open = powered) |
IFB_BT | 9 | N/A | IF channel B bias control; leave unconnected |
VCCB | 10 | Supply | Power supply for channel B |
GND | 11 | Ground | Ground |
IFOUTBP | 12 | Analog Output | IF out channel B: positive |
GND | 13 | Ground | Ground |
IFOUTBN | 14 | Analog Output | IF out channel B: negative |
GND | 15 | Ground | Ground |
NC | 16 | N/A | No connect |
LPM | 17 | Digital Input | Low power mode (0 = normal; 1 = low power) |
NC | 18 | N/A | No connect |
GND | 19 | Ground | Ground |
NC | 20 | N/A | No connect |
LO | 21 | Analog Input | Local oscillator (LO) input |
GND | 22 | Ground | Ground |
NC | 23 | N/A | No connect |
NC | 24 | N/A | No connect |
NC | 25 | N/A | No connect |
GND | 26 | Ground | Ground |
IFOUTAN | 27 | Analog Output | IF out channel A: negative |
GND | 28 | Ground | Ground |
IFOUTAP | 29 | Analog Output | IF out channel A: positive |
GND | 30 | Ground | Ground |
VCCA | 31 | Supply | Power supply for channel A |
IFA_BT | 32 | N/A | IF channel A bias control; leave unconnected |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Input voltage | –0.3 | 3.6 | V | |
Storage temperature, TSTG | –40 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | All pins except XIFOUTAP, IFOUTAN, IFOUTBP, and IFOUTBN | ±2500 | V |
Pins XIFOUTAP, IFOUTAN, IFOUTBP, and IFOUTBN (2) | ±100 | ||||
Charged-device model (CDM), per JEDEC specification JESD22-C101(3) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Operating virtual junction temperature range, TJ | –40 | 125 | °C |
THERMAL METRIC(1) | RTV | UNIT | |
---|---|---|---|
32 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 32.3 | °C/W |
RθJCtop | Junction-to-case (top) thermal resistance | 19.8 | |
RθJB | Junction-to-board thermal resistance | 5.9 | |
ψJT | Junction-to-top characterization parameter | 0.2 | |
ψJB | Junction-to-board characterization parameter | 5.9 | |
RθJCbot | Junction-to-case (bottom) thermal resistance | 1.3 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
DC Parameters | ||||||
VCC | Supply Voltage | 3.15 | 3.3 | 3.45 | V | |
ICC | Supply Current | FLO = 750 MHz | 280 | mA | ||
Pdiss | Total Power Dissipation | FLO = 750 MHz | 0.92 | W | ||
Power Down Current | 2 | mA | ||||
RF Frequency Range | ||||||
FRF | Frequency Range | 400 | 1700 | MHz | ||
RF Specifications | ||||||
G | Gain | FRF = 950 MHz (LSI) | 9.6 | dB | ||
Gvar | Gain Variation over Frequency | within any 200 MHz Band | 0.5 | dB | ||
NF | SSB Noise Figure | FRF = 950 MHz (LSI) | 9.6 | dB | ||
SSB Noise Figure with Blocker | 5 dBm blocker signal Δf > 50 MHz |
17 | dB | |||
IIP3 | Input 3rd Order Intercept Point | FRF = 950 MHz (LSI), Fspacing = 20 MHz |
26 | dBm | ||
OIP3 | Output 3rd Order Intercept Point | FRF = 950 MHz (LSI), Fspacing = 20 MHz |
35.6 | dBm | ||
OIP2 | Output 2nd Order Intercept Point | FRF = 950 MHz (LSI) | 65 | dBm | ||
IP1dB | Input 1 dB Compression Point | FRF = 950 MHz (LSI) | 11 | dBm | ||
ZIN | Input Impedance | 50 | Ω | |||
RLi | Input Return Loss | FRF = 800 - 1400 MHz (LSI) | 15 | dB | ||
LO Input | ||||||
PLO | LO Drive Level | –3 | 0 | 6 | dBm | |
FLO | LO Frequency Range | 600 | 1400 | MHz | ||
ZIN | Input Impedance | 50 | Ω | |||
RLi | Input Return Loss | FRF = 750 - 1150 MHz | 15 | dB | ||
Low Power Mode: LPM = 1 | ||||||
ICC | Supply Current | FLO = 750 MHz | 200 | mA | ||
Pdiss | Total Power Dissipation | FLO = 750 MHz | 0.66 | W | ||
G | Gain | FRF = 950 MHz (LSI) | 9.2 | dB | ||
NF | SSB Noise Figure | FRF = 950 MHz (LSI) | 9.6 | dB | ||
IIP3 | Input 3rd Order Intercept Point | FRF = 950 MHz (LSI), Fspacing = 20 MHz |
26 | dBm | ||
IP1dB | Input 1 dB Compression Point | FRF = 950 MHz (LSI) | 11 | dBm | ||
Isolation | ||||||
Channel Isolation | Drive RFinA/B IFoutA/B-IFoutB/A FRF = 950 MHz |
50 | dB | |||
RF to IF Isolation | FRF = 950 MHz | 20 | dB | |||
LO to RF Leakage | PLO = 0 dBm | –55 | dBm | |||
LO to IF Leakage | PLO = 0 dBm | –45 | dBm | |||
Spurious | ||||||
2x2 Spurious Product | 2RF - 2LO | 65 | dBc | |||
3x3 Spurious Product | 3RF - 3LO | 70 | dBc | |||
IF Output | ||||||
ZL | Differential Output Impedance Load | 200 | Ω | |||
FIF | Frequency Range | 1 dB corner frequency | 30 | 600 | MHz | |
DC Bias Range | Externally supplied DC bias through RF choke | 3.3 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
DC Parameters | ||||||
VCC | Supply Voltage | 3.15 | 3.3 | 3.45 | V | |
ICC | Supply Current | FLO = 1750 MHz | 305 | mA | ||
Pdiss | Total Power Dissipation | FLO = 1750 MHz | 1 | W | ||
Power Down Current | 2 | mA | ||||
RF Frequency Range | ||||||
FRF | Frequency Range | 700 | 2700 | MHz | ||
RF Specifications | ||||||
G | Gain | FRF = 1950 MHz (LSI) | 10 | dB | ||
Gvar | Gain Variation over Frequency | within any 200 MHz Band | 0.5 | dB | ||
NF | SSB Noise Figure | FRF = 1950 MHz (LSI) | 9.2 | dB | ||
SSB Noise Figure with Blocker | 5 dBm blocker signal Δf > 50 MHz |
15.5 | dB | |||
IIP3 | Input 3rd Order Intercept Point | FRF = 1950 MHz (LSI), Fspacing = 20 MHz |
32 | dBm | ||
OIP3 | Output 3rd Order Intercept Point | FRF = 1950 MHz (LSI), Fspacing = 20 MHz |
42 | dBm | ||
OIP2 | Output 2nd Order Intercept Point | FRF = 1950 MHz (LSI) | 70 | dBm | ||
IP1dB | Input 1 dB Compression Point | FRF = 1950 MHz (LSI) | 10.8 | dBm | ||
ZIN | Input Impedance | 50 | Ω | |||
RLi | Input Return Loss | FRF = 1700 - 2700 MHz (LSI) | 10 | dB | ||
LO Input | ||||||
PLO | LO Drive Level | –3 | 0 | 6 | dBm | |
FLO | LO Frequency Range | 500 | 2900 | MHz | ||
ZIN | Input Impedance | 50 | Ω | |||
RLi | Input Return Loss | FRF = 1500 - 2450 MHz | 15 | dB | ||
Low Power Mode: LPM = 1 | ||||||
ICC | Supply Current | FLO = 1750 MHz | 220 | mA | ||
Pdiss | Total Power Dissipation | FLO = 1750 MHz | 0.73 | W | ||
G | Gain | FRF = 1950 MHz (LSI) | 9.2 | dB | ||
NF | SSB Noise Figure | FRF = 1950 MHz (LSI) | 9.2 | dB | ||
IIP3 | Input 3rd Order Intercept Point | FRF = 1950 MHz (LSI), Fspacing = 20 MHz |
23 | dBm | ||
IP1dB | Input 1 dB Compression Point | FRF = 1950 MHz (LSI) | 10.7 | dBm | ||
Isolation | ||||||
Channel Isolation | Drive RFinA/B IFoutA/B-IFoutB/A FRF = 1950 MHz |
45 | dB | |||
RF to IF Isolation | FRF = 1950 MHz | 22 | dB | |||
LO to RF Leakage | PLO = 0 dBm | –50 | dBm | |||
LO to IF Leakage | PLO = 0 dBm | –42 | dBm | |||
Spurious | ||||||
2x2 Spurious Product | 2RF - 2LO | 70 | dBc | |||
3x3 Spurious Product | 3RF - 3LO | 75 | dBc | |||
IF Output | ||||||
ZL | Differential Output Impedance Load | 200 | Ω | |||
FIF | Frequency Range | 1 dB corner frequency | 30 | 600 | MHz | |
DC Bias Range | Externally supplied DC bias through RF choke | 3.3 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
DC Parameters | ||||||
VCC | Supply Voltage | 3.15 | 3.3 | 3.45 | V | |
ICC | Supply Current | FLO = 2300 MHz | 325 | mA | ||
Pdiss | Total Power Dissipation | FLO = 2300 MHz | 1.1 | W | ||
Power Down Current | 2 | mA | ||||
RF Frequency Range | ||||||
FRF | Frequency Range | 1700 | 3800 | MHz | ||
RF Specifications | ||||||
G | Gain | FRF = 2500 MHz (LSI) | 9.8 | dB | ||
Gvar | Gain Variation over Frequency | within any 200 MHz Band | 0.5 | dB | ||
NF | SSB Noise Figure | FRF = 2500 MHz (LSI) | 9.9 | dB | ||
SSB Noise Figure with Blocker | 5 dBm blocker signal Δf > 50 MHz |
17.5 | dB | |||
IIP3 | Input 3rd Order Intercept Point | FRF = 2500 MHz (LSI) Fspacing = 20 MHz |
29 | dBm | ||
OIP3 | Output 3rd Order Intercept Point | FRF = 2500 MHz (LSI) Fspacing = 20 MHz |
38.8 | dBm | ||
OIP2 | Output 2nd Order Intercept Point | FRF = 2500 MHz (LSI) | 65 | dBm | ||
IP1dB | Input 1 dB Compression Point | FRF = 2500 MHz (LSI) | 11.5 | dBm | ||
ZIN | Input Impedance | 50 | Ω | |||
RLi | Input Return Loss | 8 | dB | |||
LO Input | ||||||
PLO | LO Drive Level | –3 | 0 | 6 | dBm | |
FLO | LO Frequency Range | 1500 | 3600 | MHz | ||
ZIN | Input Impedance | 50 | Ω | |||
RLi | Input Return Loss | FRF = 2800 - 3400 MHz | 10 | dB | ||
Low Power Mode: LPM = 1 | ||||||
ICC | Supply Current | FLO = 2300 MHz | 230 | mA | ||
Pdiss | Total Power Dissipation | FLO = 2300 MHz | 0.76 | W | ||
G | Gain | FRF = 2500 MHz (LSI) | 9.2 | dB | ||
NF | SSB Noise Figure | FRF = 2500 MHz (LSI) | 9.9 | dB | ||
IIP3 | Input 3rd Order Intercept Point | FRF = 2500 MHz (LSI), Fspacing = 20 MHz |
22 | dBm | ||
IP1dB | Input 1 dB Compression Point | FRF = 2500 MHz (LSI) | 11.5 | dBm | ||
Isolation | ||||||
Channel Isolation | Drive RFinA/B IFoutA/B-IFoutB/A FRF = 2500 MHz |
48 | dB | |||
RF to IF Isolation | FRF = 2500 MHz | 21 | dB | |||
LO to RF Leakage | PLO = 0 dBm | –55 | dBm | |||
LO to IF Leakage | PLO = 0 dBm | –45 | dBm | |||
Spurious | ||||||
2x2 Spurious Product | 2RF - 2LO | 65 | dBc | |||
3x3 Spurious Product | 3RF - 3LO | 70 | dBc | |||
IF Output | ||||||
ZL | Differential Output Impedance Load | 200 | Ω | |||
FIF | Frequency Range | 1 dB corner frequency | 30 | 600 | MHz | |
DC Bias Range | Externally supplied DC bias through RF choke | 3.3 | V |
MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|
Power Control | ||||||
PD | Turn-on Time | PD = low to 90% final output power | 100 | ns | ||
Turn-off Time | PD = high to initial output power –30 dB | 100 | ns |
The TRF37x32 family is a dual-channel, down convert receive mixer. It provides high-linearity over wide RF and IF bandwidths while also consuming low power. The device comes in three varieties, A, B, and C, to cover an extremely wide frequency band and can operate with either low side injection (LSI) or high side injection (HSI). The IF output is optimized for 200 MHz but operates from 30 MHz to 600 MHz with appropriate external components.
The device consists of a passive mixer core buffered by an LO amplifier and a high-linearity IF amplifier. There is an on-chip LDO to regulate VCC to the voltages needed for the small-geometry SiGe BiCMOS components. The single-ended RF and LO inputs each have a wideband internal balun. The balun's center tap is internally grounded.
Each channel offers an external power down terminal control which disables the IF circuitry. The device has a low power mode controlled through an external terminal control. Low power mode reduces bias current in the LO circuitry. Both power down and low power mode controls are internally biased to a normal operating state. The IFA/B_BT terminals are self-biased and require no external components.
The TRF37x32 uses a single 3.3 V power supply and draws exceptionally low current for its performance node.
Low power mode is enabled by setting the active-high LPM terminal to a logic high. The device contains an internal pull-down to engage normal operation when the terminal is left unconnected or floating.
Low power mode reduces the bias current in the LO amplifier portion of the device and affects both channels. Total current consumption is reduced 30% while lowering analog performance metrics.
Each channel is powered down individually through the active-high PDA and PDB terminals. A logic high sets the respective channel in power down. The device contains an internal pull-down to engage normal operation when the terminal is left unconnected or floating.
Power down is implemented by removing bias in the IF amplifier. Operation of the opposite channel is not affected when either channel is turned off. Turn-on and turn-off time is fast enough to serve in most TDD applications.
Each RF input is single-ended with a wideband internal balun to convert the input to a differential signal, as shown in Figure 73. The center tap of the balun is internally grounded and is not available external to the device. The RF input should be ac coupled to driving circuitry according to the chart in Table 1.
Device | Blocking Cap Value |
---|---|
TRF37A32 | 20 pF |
TRF37B32 | 10 pF |
TRF37C32 | 10 pF |
The LO input is single ended with an internal balun to convert the input to a differential signal. The LO drive path includes a high frequency dual-mode oscillation inhibitor circuitry to ensure stable operation. For best operation it is recommended to keep the LO drive level at 0 dBm or higher to ensure inhibitor circuit does not falsely engage. At lower LO drive level, keep the LO power engaged to the device at power-up. At lower drive level the inhibitor may engage within certain frequency bands when the LO power transitions.
At the extreme RF frequencies the LO input bandwidth will force operation to either high side injection (HSI) or low side injection (LSI). Table 2 provides the operating range of the LO for each device.
Device | Operating Range | |
---|---|---|
TRF37A32 | 600 - 1400 MHz | |
TRF37B32 | 500 - 2900 MHz | |
TRF37C32 | Low Power mode (LPM) disabled | 1500 - 3600 MHz |
Low Power mode (LPM) enabled | 1500 - 3500 MHz |
The output of the device is driven by a high-linearity IF amplifier. The output nodes must be pulled up to VCC with high-Q inductors. It is designed to provide 200 Ω differential / 100 Ω single-ended output impedance. Layout should include symmetry for the differential output signal paths.
The IF output circuitry is optimized for performance at 200 MHz but operates over 30 MHz – 600 MHz.
Low power mode is activated through the low power terminal, as described in the features description. It is designed for extremely low power consumption.
The device may be operated as a single channel device by disabling one channel or in complete shutdown by disabling both channels.
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
The devices are high-linearity, wideband receive mixers. They are typically implemented to convert frequencies from the range 400 MHz to 3800 MHz into the range 30 MHz to 600 MHz.
The TRF37x32 device is typically placed in a system as illustrated in Figure 75.
A typical schematic for the TRF37x32 is shown in Figure 76.
For this design example, use the parameters shown in Table 3.
MIXER PARAMETER | EXAMPLE APPLICATION REQUIREMENTS(1) | TRF37B32 PERFORMANCE (TYPICAL) |
---|---|---|
RF Frequency Range | 2300 - 2400 MHz | 700 - 2700 MHz |
IF Frequency Range | 318.64 - 418.64 MHz | 30 - 600 MHz |
Gain | 9 - 10 dB | 9.7 dB at FRF = 2300 MHz |
NF | < 12 dB | 10 dB at FRF = 2300 MHz |
IIP3 | > 28 dBm | 30 dBm at FRF = 2300 MHz |
IP1dB | > 8 dBm | 11 dBm at FRF = 2300 MHz |
Input power should back off from the TRF37x32 compression point for linear operation, ideally by 10dB or more. Choose LNA gain and gain scheduling in order to set the appropriate power level at the RF input to the TRF37x32.
Given the expected input power level, use the expected gain through the mixer and other elements, such as SAW filter and matching networks, to calculate the voltage expected at the ADC. Adjust gain and loss elements to maximize the utilization of ADC dynamic range.
Although the TRF37x32 was designed to interface with 50 Ω RF and LO and 200 Ω differential signal lines, some elements in the signal chain may not present a wideband real impedance. Matching components are optional but may be used at these ports to improve impedance alignment, thereby increasing power delivered to the RF node and decreasing reflected and radiated power. Good matching maximizes isolation and linearity performance.
The blocking capacitor value on the RF input should be selected according to Table 1.
Use high Q inductors for pull-up biasing on the IF output. 270 nH 0805-size wirewound indictors provides excellent linearity and gain. Larger inductor values may compress the IF bandwidth, while smaller package sizes tend to introduce lower inductor Q ratings.
Connect the supply nodes of both inductors for a given channel symmetrically to the VCC net with close proximity to ensure balanced connection to the supply.
The LO and RF inputs are both designed for wideband behavior, and either high-side or low-side injection may be used interchangeably across most of the RF band. At the extreme RF frequencies the LO input bandwidth will force operation to either high side injection (HSI) or low side injection (LSI). Table 2 provides the operating range of the LO for each device. Where possible it is recommended to utilize low side injection to keep the power dissipation to a minimum.
Decoupling capacitors reduce terminal noise but also slow transient response. Adjust external capacitors in order to meet specified power-on and power-off response times. Apply transmission line matching techniques to achieve the fastest response times.
The nominal voltage supply is 3.3 V; however, the TRF37x32 offers very consistent performance across the entire recommended voltage range. Signal isolation depends partly on power supply isolation. All supplies may be generated from a common source but should be isolated through decoupling capacitors placed close to the device. The typical application schematic in Figure 76 is an excellent example. Select capacitors with self-resonant frequency near the application frequency or noise frequency. When multiple capacitors are used in parallel to create a broadband decoupling network, place the capacitor with the higher self-resonant frequency closer to the device.
No power up sequence is required.