SLLS808A JULY 2007 – November 2016 TRS202
UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, VCC(2) | –0.3 | 6 | V | |
Positive charge pump voltage, V+(2) | VCC – 0.3 | 14 | V | |
Negative charge pump voltage, V–(2) | –14 | 0.3 | V | |
Input voltage, VI | Drivers | –0.3 | V+ + 0.3 | V |
Receivers | ±30 | |||
Output voltage, VO | Drivers | V– – 0.3 | V+ + 0.3 | V |
Receivers | –0.3 | VCC + 0.3 | ||
Short-circuit duration, DOUT | Continuous | |||
Operating virtual junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | Pins 7, 8, 13, 14, and 15 |
±15000 | V |
All other pins | ±2000 | ||||
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
Supply voltage | 4.5 | 5 | 5.5 | V | ||
VIH | Driver high-level input voltage (DIN) | 2 | V | |||
VIL | Driver low-level input voltage (DIN) | 0.8 | V | |||
VI | Driver input voltage (DIN) | 0 | 5.5 | V | ||
Receiver input voltage (RIN) | –30 | 30 | ||||
TA | Operating free-air temperature | TRS202C | 0 | 70 | °C | |
TRS202I | –40 | 85 |
THERMAL METRIC(1) | TRS202 | UNIT | ||
---|---|---|---|---|
D (SOIC) | PW (TSSOP) | |||
16 PINS | 16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 76.2 | 101 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 36.8 | 36.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 33.9 | 45.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 6.7 | 2.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 33.6 | 45.3 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX | UNIT | |
---|---|---|---|---|---|---|
ICC | Supply current | No load and VCC = 5 V | 8 | 15 | mA |
PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VOH | High-level output voltage | DOUT at RL = 3 kΩ to GND and DIN = GND | 5 | 9 | V | ||
VOL | Low-level output voltage | DOUT at RL = 3 kΩ to GND and DIN = VCC | –5 | –9 | V | ||
IIH | High-level input current | VI = VCC | 15 | 200 | µA | ||
IIL | Low-level input current | VI at 0 V | –15 | –200 | µA | ||
IOS(3) | Short-circuit output current | VCC = 5.5 V and VO = 0 V | ±10 | ±60 | mA | ||
ro | Output resistance | VCC, V+, V– = 0 V, and VO = ±2 V | 300 | Ω |
PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VOH | High-level output voltage | IOH = –1 mA | 3.5 | VCC – 0.4 | V | ||
VOL | Low-level output voltage | IOL = 1.6 mA | 0.4 | V | |||
VIT+ | Positive-going input threshold voltage | VCC = 5 V and TA = 25°C | 1.7 | 2.4 | V | ||
VIT– | Negative-going input threshold voltage | VCC = 5 V and TA = 25°C | 0.8 | 1.2 | V | ||
Vhys | Input hysteresis (VIT+ – VIT–) | 0.2 | 0.5 | 1 | V | ||
rI | Input resistance | VI = ±3 V to ±25 V | 3 | 5 | 7 | kΩ |
PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
Maximum data rate | CL = 50 to 1000 pF, one DOUT switching, and RL = 3 kΩ to 7 kΩ (see Figure 6) |
120 | kbit/s | ||||
tPLH(D) | Propagation delay time, low- to high-level output |
CL = 2500 pF, all drivers loaded, and RL = 3 kΩ (see Figure 6) |
2 | µs | |||
tPHL(D) | Propagation delay time, high- to low-level output |
CL = 2500 pF, all drivers loaded, and RL = 3 kΩ (see Figure 6) |
2 | µs | |||
tsk(p) | Pulse skew(3) | CL = 150 pF to 2500 pF and RL = 3 kΩ to 7 kΩ (see Figure 7) |
300 | ns | |||
SR(tr) | Slew rate, transition region | CL = 50 pF to 1000 pF, VCC = 5 V, and RL = 3 kΩ to 7 kΩ (see Figure 6) | 3 | 6 | 30 | V/µs |
PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX | UNIT | |
---|---|---|---|---|---|---|
tPLH(R) | Propagation delay time, low- to high-level output | CL = 150 pF | 0.5 | 10 | µs | |
tPHL(R) | Propagation delay time, high- to low-level output | CL = 150 pF | 0.5 | 10 | µs | |
tsk(p) | Pulse skew(3) | 300 | ns |