SLLS850D January 2008 – March 2017 TRS3253E
PRODUCTION DATA.
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC to GND | –0.3 | 6 | V | ||
VL to GND | –0.3 | VCC + 0.3 | |||
V+ to GND | –0.3 | 7 | |||
V– to GND | 0.3 | –7 | |||
V+ + |V–|(2) | 13 | ||||
VI | Input voltage | DIN, FORCEOFF, and FORCEON to GND | –0.3 | 6 | V |
RIN to GND | ±25 | ||||
VO | Output voltage | DOUT to GND | ±13.2 | V | |
ROUT to GND | –0.3 | VL + 0.3 | |||
Continuous power dissipation | TA = 85°C, 32-pin RSM (RθJA = 37.2°C/W)(3) | 1747 | mW | ||
TJ | Junction temperature | 150 | °C | ||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | All pins except 17 to 23 and 25 | ±2000 | V |
Pins 17 to 23 and 25 | ±15000 | ||||
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | All pins | ±1500 | |||
IEC61000-4-2, Contact discharge | Pins 17 to 23 and 25 | ±8000 | |||
IEC61000-4-2, Air-gap discharge | Pins 17 to 23 and 25 | ±15000 |
MIN | MAX | UNIT | ||||
---|---|---|---|---|---|---|
VCC | Supply voltage | 3 | 5.5 | V | ||
VL | Supply voltage | 1.65 | VCC | V | ||
Input logic low | DIN, FORCEOFF, FORCEON | VL = 3 V or 5.5 V | 0 | 0.8 | V | |
VL = 2.3 V | 0 | 0.6 | ||||
VL = 1.65 V | 0 | 0.5 | ||||
Input logic high | DIN, FORCEOFF, FORCEON | VL = 5.5 V | 2.4 | VL | V | |
VL = 3 V | 2 | VL | ||||
VL = 2.7 V | 1.4 | VL | ||||
VL = 1.95 V | 1.25 | VL | ||||
Operating temperature | TRS3253EIRSMR | –40 | 85 | °C | ||
Receiver input voltage | –25 | 25 | V |
THERMAL METRIC(1) | TRS3253E | UNIT | |
---|---|---|---|
RSM (VQFN) | |||
32 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 37.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 30.1 | °C/W |
RθJB | Junction-to-board thermal resistance | 7.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.4 | °C/W |
ψJB | Junction-to-board characterization parameter | 7.6 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 2.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(2) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
II | Input leakage current | FORCEOFF, FORCEON | ±0.01 | ±1 | μA | ||
ICC | Supply current (TA = 25°C) |
Auto-powerdown plus disabled | No load, FORCEOFF and FORCEON at VCC |
0.5 | 1 | mA | |
Powered off | No load, FORCEOFF at GND | 1 | 10 | μA | |||
Auto-powerdown plus active | No load, FORCEOFF at VCC, FORCEON at GND, All RIN are open or grounded |
1 | 10 |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
VOH | Output voltage swing | All driver outputs loaded with 3 kΩ to ground, VCC= 3.1V to 5.5V | ±5 | ±5.4 | V | |
rO | Output resistance | VCC = V+ = V– = 0, Driver output = ±2 V | 300 | 10M | Ω | |
IOS | Output short-circuit current | VT_OUT = 0 | ±60 | mA | ||
IOZ | Output leakage current | VT_OUT = ±12 V, FORCEOFF = GND, VCC = 3 V to 3.6 V |
±25 | μA | ||
VT_OUT = ±12 V, FORCEOFF = GND, VCC = 4.5 V to 5.5 V |
||||||
Driver input hysteresis | 0.5 | V | ||||
Input leakage current | DIN, FORCEOFF, FORCEON | ±0.01 | ±1 | μA |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
Ioff | Output leakage current | ROUT, receivers disabled | ±0.05 | ±10 | μA | ||
VOL | Output voltage low | IOUT = 1.6 mA | 0.4 | V | |||
VOH | Output voltage high | IOUT = –1 mA | VL – 0.6 | VL – 0.1 | V | ||
VIT– | Input threshold low | TA = 25°C | VL = 5 V | 0.8 | 1.2 | V | |
VL = 3.3 V | 0.6 | 1.5 | |||||
VIT+ | Input threshold high | TA = 25°C | VL = 5 V | 1.8 | 2.4 | V | |
VL = 3.3 V | 1.5 | 2.4 | |||||
Vhys | Input hysteresis | 0.5 | V | ||||
Input resistance | TA = 25°C | 3 | 5 | 7 | kΩ |
PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
VIT+(valid) | Receiver input threshold for INVALID high-level output voltage |
FORCEON = GND, FORCEOFF = VL | 2.7 | V | |
VIT–(valid) | Receiver input threshold for INVALID high-level output voltage |
FORCEON = GND, FORCEOFF = VL | –2.7 | V | |
VT(invalid) | Receiver input threshold for INVALID low-level output voltage |
FORCEON = GND, FORCEOFF = VL | –0.3 | 0.3 | V |
VOH | INVALID high-level output voltage | IOH = –1 mA, FORCEON = GND, FORCEOFF = VL |
VL – 0.6 | V | |
VOL | INVALID low-level output voltage | IOL = 1.6 mA, FORCEON = GND, FORCEOFF = VL |
0.4 | V |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
Maximum data rate | RL = 3 kΩ, CL = 200 pF, one driver switching | 1000 | kbps | ||||
Time-to-exit powerdown | |VT_OUT| > 3.7 V | 100 | μs | ||||
|tPHL – tPLH| | Driver skew(2) | 100 | ns | ||||
Transition-region slew rate |
VCC = 3.3 V, TA = 25°C, RL = 3 kΩ to 7 kΩ, Measured from 3 V to –3 V or –3 V to 3 V |
CL = 150 pF to 1000 pF | 15 | 150 | V/μs |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|---|
tPHL | Receiver propagation delay | Receiver input to receiver output, CL = 150 pF | 0.15 | μs | ||
tPLH | 0.15 | |||||
tPHL – tPLH | Receiver skew | 50 | ns | |||
ten | Receiver output enable time | From FORCEOFF | 200 | |||
tdis | Receiver output disable time | From FORCEOFF | 200 |
PARAMETER | MIN | TYP(1) | MAX | UNIT | |
---|---|---|---|---|---|
tvalid | Propagation delay time, low- to high-level output | 0.1 | μs | ||
tinvalid | Propagation delay time, high- to low-level output | 50 | |||
ten | Supply enable time | 25 | |||
tdis | Receiver or driver edge to auto-powerdown plus | 15 | 30 | 60 | s |