SLLS824B August   2007  – December 2023 TRSF3223E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Recommended Operating Conditions
    3. 4.3  ESD Ratings
    4. 4.4  ESD Ratings - IEC Specifications
    5. 4.5  Thermal Information
    6. 4.6  Electrical Characteristics
    7. 4.7  Electrical Characteristics, Driver
    8. 4.8  Switching Characteristics, Driver
    9. 4.9  Electrical Characteristics, Receiver
    10. 4.10 Switching Characteristics, Receiver
    11. 4.11 Electrical Characteristics, Auto-Powerdown
    12. 4.12 Switching Characteristics, Auto-Powerdown
  6. 5 Parameter Measurement Information
  7. 6 Detailed Description
    1. 6.1 Functional Block Diagram
    2. 6.2 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Typical Application
      1. 7.1.1 Detailed Design Procedure
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.7 Electrical Characteristics, Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP(2) MAX UNIT
VOH High-level output voltage DOUT at RL = 3 kΩ to GND 5 5.4 V
VOL Low-level output voltage DOUT at RL = 3 kΩ to GND –5 –5.4 V
IIH High-level input current VI = VCC ±0.01 ±1 μA
IIL Low-level input current VI at GND ±0.01 ±1 μA
IOS Short-circuit output current(3) VCC = 3.6 V, VO = 0 V ±35 ±60 mA
VCC = 5.5 V, VO = 0 V
ro Output resistance VCC, V+, and V– = 0 V, VO = ±2 V 300 10M Ω
IOZ Output leakage current FORCEOFF = GND, VCC = 3 V to 3.6 V, VO = ±12 V ±25 μA
FORCEOFF = GND, VCC = 4.5 V to 5.5 V, VO = ±12 V ±25
(1) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
(2) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(3) Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one output should be shorted at a time.