SLLS824B August   2007  – December 2023 TRSF3223E

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Specifications
    1. 4.1  Absolute Maximum Ratings
    2. 4.2  Recommended Operating Conditions
    3. 4.3  ESD Ratings
    4. 4.4  ESD Ratings - IEC Specifications
    5. 4.5  Thermal Information
    6. 4.6  Electrical Characteristics
    7. 4.7  Electrical Characteristics, Driver
    8. 4.8  Switching Characteristics, Driver
    9. 4.9  Electrical Characteristics, Receiver
    10. 4.10 Switching Characteristics, Receiver
    11. 4.11 Electrical Characteristics, Auto-Powerdown
    12. 4.12 Switching Characteristics, Auto-Powerdown
  6. 5 Parameter Measurement Information
  7. 6 Detailed Description
    1. 6.1 Functional Block Diagram
    2. 6.2 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Typical Application
      1. 7.1.1 Detailed Design Procedure
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

4.8 Switching Characteristics, Driver

over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETERTEST CONDITIONS(1)MINTYP(2)MAXUNIT
Maximum
data rate
(seeFigure 5-1)		RL = 3 kΩ,
One DOUT switching		CL = 1000 pF250kbit/s
CL = 250 pF,VCC = 3 V to 4.5 V1000
CL = 1000 pF,VCC = 4.5 V to 5.5 V1000
tsk(p)Pulse skew(3)CL = 150 pF to 2500 pF,RL = 3 kΩ to 7 kΩ,See Figure 5-2300ns
SR(tr)Slew rate, transition region
(see Figure 5-1)		RL = 7 kΩ,CL = 150 pF to 1000 pF890V/μs
RL = 3 kΩCL = 1000 pF1260
CL = 150 pF to 250 pF24150
(1) Test conditions are C1–C4 = 0.1 μF at VCC = 3.3 V ± 0.3 V; C1 = 0.047 μF, C2–C4 = 0.33 μF at VCC = 5 V ± 0.5 V.
(2) All typical values are at VCC = 3.3 V or VCC = 5 V, and TA = 25°C.
(3) Pulse skew is defined as |tPLH  – tPHL| of each channel of the same device.