SCDS248E October   2009  – September 2022 TS12A12511

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: ±5-V Dual Supply
    6. 6.6 Electrical Characteristics: 12-V Single Supply
    7. 6.7 Electrical Characteristics: 5-V Single Supply
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Test Circuits
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics: 12-V Single Supply

VCC = 12 V ± 10%, -VCC = 0 V, GND = 0 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETERTEST CONDITIONSTA= 25°CTA= –40°C to 85°CUNIT
MINTYPMAXMINTYPMAX
ANALOG SWITCH
Analog signal range0VCCV
RonON-state resistanceVNC =0 V to 10.8 V or VNO = 0 V to 10.8 V,
ICOM = –10 mA, see Figure 7-1		558Ω
ΔRonON-state resistance
match between
channels		VNC = 0 V to 10.8 V or VNO = 0 V to 10.8 V,
ICOM = –10 mA		1.62.42.6Ω
Ron(flat)ON-state resistance
flatness		VNC = 3.3 V to 7V or VNO = 3.3 V to 7 V,
ICOM = –10 mA		1.71.83.2Ω
LEAKAGE CURRENTS
INC(OFF),
INO(OFF)		OFF leakage currentVNC = 0 V to 10.8 V or VNO = 0 V to 10.8 V,
VCOM = 0 V to 10.8 V; see Figure 7-2		–10±0.510–5050nA
INC(ON),
INO(ON)		ON leakage currentVNC = 0 V to 10.8V or VNO = 0 V to 10.8 V,
VCOM = open; see Figure 7-3		–10±0.510–5050nA
DIGITAL INPUTS
VINHHigh-level input voltage5VCCV
VINLLow-level input voltage00.8V
IINL, IINHInput currentVIN = VINL or VINH±0.005–0.10.1μA
CINDigital input capacitance2.7pF
DYNAMIC(1)
tONTurn-ON timeRL = 300 Ω, CL = 35 pF,
VCOM = 3.3 V; see Figure 7-5		5685110ns
tOFFTurn-OFF timeRL = 300 Ω, CL = 35 pF,
VCOM = 3.3 V; see Figure 7-5		253031ns
tBBMBreak-before-make
time delay		RL = 300 Ω, CL = 35 pF,
VNC = VNO = 3.3 V; see Figure 7-6		3019ns
QCCharge injectionRGEN = VNC = VNO = 0 V, RGEN = 0 Ω, CL = 1 nF;
see Figure 7-7		491pC
OISOOFF isolationRL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 7-8		–70dB
XTALKChannel-to-channel crosstalkRL = 50 Ω, CL = 5 pF, f = 1 MHz,
see Figure 7-9		–70dB
BWBandwidth –3 dBRL = 50 Ω, CL = 5 pF, see Figure 7-10

200

MHz
THDTotal harmonic distortionRL = 600 Ω, CL = 15pF, VNO = 1 VRMS, f = 20 kHz; see Figure 7-110.04%
CNC(OFF),
CINO(OFF)		NC, NO
OFF capacitance		f = 1 MHz, see Figure 7-414pF
CCOM(ON),
CNC(ON),
CNO(ON)		COM, NC, NO
ON capacitance		f = 1 MHz, see Figure 7-455pF
SUPPLY
ICCPositive supply current0.071μA
(1) Specified by design, not subject to production test.