SCDS176B SEPTEMBER   2004  – October 2019 TS3L110

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Logic Diagram (Positive Logic)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Dynamic Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • DBQ|16
  • RGY|16
  • D|16
  • DGV|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) TS3L110 UNIT
D (SOIC) DBQ (SSOP) DGV (TVSOP) PW (TSSOP) RGV (VQFN)
16 PINS 16 PINS 16 PINS 16 PINS 16 PINS
RθJA Junction-to-ambient thermal resistance 92.0 114.5 139.3 111.5 50.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 52.3 60.5 57.4 42.0 48.1 °C/W
RθJB Junction-to-board thermal resistance 50.3 58.2 73.7 57.8 26.7 °C/W
ψJT Junction-to-top characterization parameter 17.3 15.3 7.2 4.2 2.1 °C/W
ψJB Junction-to-board characterization parameter 50.0 57.6 73.0 57.2 26.5 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance - - - - 10.7 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC package thermal metrics application report.