SCDS220M November   2006  – November 2024 TS3USB221

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3V ± 10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5V ± 10%
    8. 5.8  Switching Characteristics, VCC = 3.3V ± 10%
    9. 5.9  Switching Characteristics, VCC = 2.5V ± 10%
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Low Power Mode
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.4 Thermal Information

THERMAL METRIC(1) TS3USB221 UNIT
DRC (VSON) RSE (UQFN)
10 PINS 10 PINS
RθJA Junction-to-ambient thermal resistance 57.7 204.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 87.7 118.1
RθJB Junction-to-board thermal resistance 32.6 121.5
ψJT Junction-to-top characterization parameter 8.2 13.9
ψJB Junction-to-board characterization parameter 32.8 121.2
RθJC(bot) Junction-to-case (bottom) thermal resistance 18.5 N/A
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.