SCDS277C November   2008  – October 2024 TS3USB221A

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5V ±10%
    10. 5.10 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Low Power Mode
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Thermal Information

THERMAL METRIC(1)RSE (UQFN)UNIT
10 PINS
RθJAJunction-to-ambient thermal resistance204.8°C/W
RθJC(top)Junction-to-case (top) thermal resistance118.1
RθJBJunction-to-board thermal resistance121.5
ψJTJunction-to-top characterization parameter13.9
ψJBJunction-to-board characterization parameter121.2
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.