SCDS277C November   2008  – October 2024 TS3USB221A

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5V ±10%
    10. 5.10 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Low Power Mode
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Recommended Operating Conditions

MINMAXUNIT
VCCSupply voltage2.33.6V
VS, V OEHigh-level control input voltageVCC = 2.3V to 2.7V0.46 × VCCVCCV
VCC = 2.7V to 3.6V0.46 × VCCVCC
Low-level control input voltageVCC = 2.3V to 2.7V00.25 × VCCV
VCC = 2.7V to 3.6V00.25 × VCC
VI/OData input/output voltage(1)05.5V
TAOperating free-air temperature–4085°C
The I/O pins are 5.5V tolerant and functional for the entire range. However, for VI/O > 3.6V, channel RON will be high (up to 100Ω).