SCDS277C November   2008  – October 2024 TS3USB221A

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Electrical Characteristics
    6. 5.6  Dynamic Electrical Characteristics, VCC = 3.3V ±10%
    7. 5.7  Dynamic Electrical Characteristics, VCC = 2.5V ±10%
    8. 5.8  Switching Characteristics, VCC = 3.3V ±10%
    9. 5.9  Switching Characteristics, VCC = 2.5V ±10%
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Low Power Mode
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • VCC operation at 2.5V to 3.3V
  • VI/O accepts signals up to 5.5V
  • 1.8V compatible control-pin inputs
  • Low-power mode when OE is disabled (1μA)
  • RON = 6Ω maximum
  • ΔRON = 0.2Ω typical
  • CIO(ON) = 6pf typical
  • Low power consumption (30μA maximum)
  • High bandwidth (900MHz typical)
  • Latch-up performance exceeds 100mA
    per JESD 78, Class II
  • ESD performance tested per JEDEC JS-001
    • 7000V human-body model
    • 1000V charged-device model (JEDEC JS-002)
  • ESD performance I/O to GND
    • 12kV human-body model