SCDS216E OCTOBER   2005  – November 2017 TS5A3160

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
V+ Supply voltage(3) –0.5 6.5 V
VNC
VNO
VCOM 		Analog voltage(3) (4) (5) –0.5 V+ + 0.5 V
IK Analog port diode current VNC, VNO, VCOM < 0 –50 mA
INC
INO
ICOM 		On-state switch current VNC, VNO, VCOM = 0 to V+ –200 200 mA
On-state peak switch current(6) –400 400
VI Digital input voltage(3) (4) –0.5 6.5 V
IIK Digital input clamp current VI < 0 –50 mA
I+ Continuous current through V+ 100 mA
IGND Continuous current through GND –100 mA
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VI/O Switch input/output voltage 0 V+ V
V+ Supply voltage 1.65 5.5 V
VI Control input voltage 0 5.5 V
TA Operating temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) TS5A3160 UNIT
DBV (SOT-23) DCK (SC-70)
6 PINS 6 PINS
RθJA Junction-to-ambient thermal resistance 165 259 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics for 5-V Supply

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
ANALOG SWITCH
VCOM, VNC, VNO Analog signal range 0 V+ V
rpeak Peak ON
resistance		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.8 1.1 Ω
Full 1.5
ron ON-state resistance VNO or VNC = 2.5 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.7 0.9 Ω
Full 1.1
Δron ON-state resistance match
between channels		 VNO or VNC = 2.5 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.05 0.1 Ω
Full 0.1
ron(flat) ON-state resistance
flatness		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.15 Ω
VNO or VNC = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 0.1 0.25
Full 0.25
INC(OFF),
INO(OFF) 		NC, NO
OFF leakage current		 VNC or VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V, VCOM = 1 V,		 Switch OFF,
see Figure 14		 25°C 5.5 V –20 2 20 nA
Full –100 100
INC(PWROFF),
INO(PWROFF) 		VNC or VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0,		 Switch OFF,
see Figure 14		 25°C 0 V –1 0.2 1 μA
Full –20 20
INC(ON),
INO(ON) 		NC, NO
ON leakage current		 VNC or VNO = 0 to V+,
VCOM = Open, 		Switch ON,
see Figure 15		 25°C 5.5 V –20 2 20 nA
Full –100 100
ICOM(PWROFF) COM
OFF leakage current		 VCOM = 0 to 5.5 V,
VNC or VNO = 5.5 V to 0, 		Switch OFF,
see Figure 14		 25°C 0 V –1 0.1 1 μA
Full –20 20
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNC or VNO = Open,
or
VCOM = 4.5 V,
VNC or VNO = Open,		 Switch ON,
see Figure 15		 25°C 5.5 V –20 2 20 nA
Full –100 100
DIGITAL CONTROL INPUT (IN)(2)
VIH Input logic high Full 2.4 5.5 V
VIL Input logic low Full 0 0.8 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 5.5 V –2 0.2 nA
Full 100 100
DYNAMIC
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 5 V 2 3.5 6 ns
Full 4.5 V to 5.5 V 1 8
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 5 V 3 8.5 13 ns
Full 4.5 V to 5.5 V 2 15
tMBB Make-before-break time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 18		 25°C 5 V 2 7 12 ns
Full 5 V to
5.5 V		 2 15
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF,
see Figure 22		 25°C 5 V 36.5 pC
CNC(OFF),
CNO(OFF) 		NC, NO
OFF capacitance		 VNC or VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 5 V 18 pF
CNC(ON),
CNO(ON) 		NC, NO
ON capacitance		 VNC or VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 5 V 55 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 5 V 55 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 5 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 19 25°C 5 V 100 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,		 See Figure 20 25°C 5 V –64 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 See Figure 20 25°C 5 V –64 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 23		 25°C 5 V 0.004%
SUPPLY
I+ Positive supply current VI = V+ or GND 25°C 5.5 V 10 50 nA
Full 500
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.6 Electrical Characteristics for 3.3-V Supply

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
ANALOG SWITCH
VCOM, VNC, VNO Analog signal range 0 V+ V
rpeak Peak ON
resistance		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 1.3 1.6 Ω
Full 2
ron ON-state resistance VNO or VNC = 2 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 1.2 1.5 Ω
Full 1.7
Δron ON-state resistance match
between channels		 VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 0.1 0.15 Ω
Full 0.15
ron(flat) ON-state resistance
flatness		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 0.2 Ω
VNO or VNC = 2 V, 0.8 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 0.15 0.3
Full 0.3
INC(OFF),
INO(OFF) 		NC, NO
OFF leakage current		 VNC or VNO = 1 V,
VCOM = 3 V,
or
VNC or VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
see Figure 14		 25°C 3.6 V –20 2 20 nA
Full –50 50
INC(PWROFF),
INO(PWROFF) 		VNC or VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 Switch OFF,
see Figure 14		 25°C 0 V –1 0.2 1 μA
Full –15 15
INC(ON),
INO(ON) 		NC, NO
ON leakage current		 VNC or VNO = 1 V,
VCOM = Open,
or
VNC or VNO = 3 V,
VCOM = Open, 		Switch ON,
see Figure 15		 25°C 3.6 V –10 2 10 nA
Full –20 20
ICOM(PWROFF) COM
OFF leakage current		 VCOM = 0 to 3.6 V,
VNC or VNO = 3.6 V to 0, 		Switch OFF,
see Figure 14		 25°C 0 V –1 0.2 1 μA
Full –15 15
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNC or VNO = Open,
or
VCOM = 3 V,
VNC or VNO = Open,		 Switch ON,
see Figure 15		 25°C 3.6 V –10 2 10 nA
Full –20 20
DIGITAL CONTROL INPUT (IN)(2)
VIH Input logic high Full 2 5.5 V
VIL Input logic low Full 0 0.8 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 3.6 V –2 2 nA
Full –100 100
DYNAMIC
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 3.3 V 2 4.5 13 ns
Full 3 V to
3.6 V		 1 15
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 3.3 V 3 9 15 ns
Full 3 V to
3.6 V		 2 20
tMBB Make-before-break time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 18		 25°C 3.3 V 1 7 12 ns
Full 3 V to
3.6 V		 1 15
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF,
see Figure 22		 25°C 3.3 V 20 pC
CNC(OFF),
CNO(OFF) 		NC, NO
OFF capacitance		 VNC or VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 3.3 V 18 pF
CNC(ON),
CNO(ON) 		NC, NO
ON capacitance		 VNC or VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 3.3 V 55 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 3.3 V 55 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 3.3 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 19 25°C 3.3 V 100 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,		 See Figure 20 25°C 3.3 V –64 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 See Figure 20 25°C 3.3 V –64 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 23		 25°C 3.3 V 0.01%
SUPPLY
I+ Positive supply current VI = V+ or GND 25°C 3.6 V 10 30 nA
Full 100
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.7 Electrical Characteristics for 2.5-V Supply

V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
ANALOG SWITCH
VCOM, VNC, VNO Analog signal range 0 V+ V
rpeak Peak ON
resistance		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 1.8 2.5 Ω
Full 2.7
ron ON-state resistance VNO or VNC = 1.8 V,
ICOM = –8 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 1.5 2 Ω
Full 2.4
Δron ON-state resistance match
between channels		 VNO or VNC = 1.8 V,
ICOM = –8 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 0.15 0.2 Ω
Full 0.2
ron(flat) ON-state resistance
flatness		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –8 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 2.6 Ω
VNO or VNC = 0.8 V, 1.8 V,
ICOM = –8 mA,		 Switch ON,
see Figure 13		 25°C 0.6 1
Full 1
INC(OFF),
INO(OFF) 		NC, NO
OFF leakage current		 VNC or VNO = 0.5 V,
VCOM = 2.2 V,
or
VNC or VNO = 2.2 V,
VCOM = 0.5 V,		 Switch OFF,
see Figure 14		 25°C 2.3 V –20 2 20 nA
Full –50 50
INC(PWROFF),
INO(PWROFF) 		VNC or VNO = 0 to 2.7 V,
VCOM = 2.7 V to 0,		 Switch OFF,
see Figure 14		 25°C 0 V –1 0.1 1 μA
Full –10 10
INC(ON),
INO(ON) 		NC, NO
ON leakage current		 VNC or VNO = 0.5 V,
VCOM = Open,
or
VNC or VNO = 2.2 V,
VCOM = Open, 		Switch ON,
see Figure 15		 25°C 2.7 V –10 2 10 nA
Full –20 20
ICOM(PWROFF) COM
OFF leakage current		 VCOM = 0 to 2.7 V,
VNC or VNO = 2.7 V to 0, 		Switch OFF,
see Figure 14		 25°C 0 V –1 0.1 1 μA
Full –10 10
ICOM(ON) COM
ON leakage current		 VCOM = 0.5 V,
VNC or VNO = Open,
or
VCOM = 2.2 V,
VNC or VNO = Open,		 Switch ON,
see Figure 15		 25°C 2.7 V –10 2 10 nA
Full –20 20
DIGITAL CONTROL INPUT (IN)(2)
VIH Input logic high Full 1.8 5.5 V
VIL Input logic low Full 0 0.6 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 2.7 V –2 2 nA
Full –20 20
DYNAMIC
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 2.5 V 2 6.5 15 ns
Full 2.3 V to
2.7 V		 1 17
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 2.5 V 3 11 18 ns
Full 2.3 V to
2.7 V		 2 20
tMBB Make-before-break time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 18		 25°C 2.5 V 1 8 12 ns
Full 2.3 V to
2.7 V		 1 15
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF,
see Figure 22		 25°C 2.5 V 12 pC
CNC(OFF),
CNO(OFF) 		NC, NO
OFF capacitance		 VNC or VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 2.5 V 18 pF
CNC(ON),
CNO(ON) 		NC, NO
ON capacitance		 VNC or VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 2.5 V 55 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 2.5 V 55 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 2.5 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 19 25°C 2.5 V 100 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,		 See Figure 20 25°C 2.5 V –64 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 See Figure 20 25°C 2.5 V –64 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 23		 25°C 2.5 V 0.02%
SUPPLY
I+ Positive supply current VI = V+ or GND 25°C 2.7 V 10 30 nA
Full 50
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.8 Electrical Characteristics for 1.8-V Supply

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS TA V+ MIN TYP MAX UNIT
ANALOG SWITCH
VCOM, VNC, VNO Analog signal range 0 V+ V
rpeak Peak ON
resistance		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 5 Ω
Full 15
ron ON-state resistance VNO or VNC = 1.5 V,
ICOM = –2 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 2 2.5 Ω
Full 3.5
Δron ON-state resistance match
between channels		 VNO or VNC = 1.5 V,
ICOM = –2 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 0.15 0.4 Ω
Full 0.4
ron(flat) ON-state resistance
flatness		 0 ≤ (VNO or VNC) ≤ V+,
ICOM = –2 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 5 Ω
VNO or VNC = 0.6 V, 1.5 V,
ICOM = –2 mA,		 Switch ON,
see Figure 13		 25°C 4.5
Full
INC(OFF),
INO(OFF) 		NC, NO
OFF leakage current		 VNC or VNO = 0.3 V,
VCOM = 1.65 V,
or
VNC or VNO = 1.65 V,
VCOM = 0.3 V,		 Switch OFF,
see Figure 14		 25°C 1.95 V –5 2 5 nA
Full –20 20
INC(PWROFF),
INO(PWROFF) 		VNC or VNO = 0 to 1.95 V,
VCOM = 1.95 V to 0,		 Switch OFF,
see Figure 14		 25°C 0 V –1 0.1 1 μA
Full –5 5
INC(ON),
INO(ON) 		NC, NO
ON leakage current		 VNC or VNO = 0.3 V,
VCOM = Open,
or
VNC or VNO = 1.65 V,
VCOM = Open, 		Switch ON,
see Figure 15		 25°C 1.95 V –5 2 5 nA
Full –20 20
ICOM(PWROFF) COM
OFF leakage current		 VCOM = 0 to 1.95 V,
VNC or VNO =1.95 V to 0, 		Switch OFF,
see Figure 14		 25°C 0 V –1 0.1 1 μA
Full –5 5
ICOM(ON) COM
ON leakage current		 VCOM = 0.3 V,
VNC or VNO = Open,
or
VCOM = 1.65 V,
VNC or VNO = Open,		 Switch ON,
see Figure 15		 25°C 1.95 V –5 2 5 nA
Full –20 20
DIGITAL CONTROL INPUT (IN)(2)
VIH Input logic high Full 1.5 5.5 V
VIL Input logic low Full 0 0.6 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 1.95 V –2 2 nA
Full –20 20
DYNAMIC
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 1.8 V 6 13 24 ns
Full 2.3 V to 2.7 V 5 27
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 1.8 V 6 15 27 ns
Full 2.3 V to 2.7 V 5 30
tMBB Make-before-break time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 18		 25°C 1.8 V 2 7 12 ns
Full 2.3 V to 2.7 V 2 15
QC Charge injection VGEN = 0,
RGEN = 0,		 CL = 1 nF,
see Figure 22		 25°C 1.8 V 5.5 pC
CNC(OFF),
CNO(OFF) 		NC, NO
OFF capacitance		 VNC or VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 1.8 V 18 pF
CNC(ON),
CNO(ON) 		NC, NO
ON capacitance		 VNC or VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 1.8 V 55 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 1.8 V 55 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 1.8 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 19 25°C 1.8 V 105 MHz
OISO OFF isolation RL = 50 Ω,
f = 10 MHz,		 See Figure 20 25°C 1.8 V –64 dB
XTALK Crosstalk RL = 50 Ω,
f = 1 MHz,		 See Figure 20 25°C 1.8 V –64 dB
THD Total harmonic distortion RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 23		 25°C 1.8 V 0.06%
SUPPLY
I+ Positive supply current VI = V+ or GND 25°C 1.95 V 5 15 nA
Full 50
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(2) All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, SCBA004.

6.9 Typical Characteristics

TS5A3160 grp1_cds216.gif Figure 1. ron vs VCOM
TS5A3160 grp3_cds216.gif Figure 3. ron vs VCOM (V+ = 5 V)
TS5A3160 grp5.5_cds216.gif Figure 5. Leakage Current vs Temperature (V+ = 5 V)
TS5A3160 grp7_cds216.gif Figure 7. tON and tOFF vs Supply Voltage
TS5A3160 grp10_cds216.gif Figure 9. Bandwidth (Gain vs Frequency) (V+ = 5 V)
TS5A3160 grp12_cds216.gif Figure 11. Total Harmonic Distortion vs Frequency
TS5A3160 grp2_cds216.gif Figure 2. ron vs VCOM (V+ = 3.3 V)
TS5A3160 grp4_cds216.gif Figure 4. Leakage Current vs Temperature (V+ = 5.5 V)
TS5A3160 grp6_cds216.gif Figure 6. Charge Injection (QC) vs VCOM
TS5A3160 grp9_cds216.gif
Figure 8. Logic-Level Threshold vs V+
TS5A3160 grp11_cds216.gif Figure 10. OFF Isolation vs Crosstalk (V+ = 5 V)
TS5A3160 grp13_cds216.gif
Figure 12. Power-Supply Current vs Temperature
(V+ = 5 V)