SCDS357A July   2014  – December 2014 TS5A3166-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Simplified Schematic
  5. 5 Revision History
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics for 5-V Supply
    6. 7.6 Electrical Characteristics for 3.3-V Supply
    7. 7.7 Electrical Characteristics for 2.5-V Supply
    8. 7.8 Electrical Characteristics for 1.8-V Supply
    9. 7.9 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Trademarks
    2. 13.2 Electrostatic Discharge Caution
    3. 13.3 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9 Detailed Description

9.1 Overview

Table 1. Parameter Description

SYMBOL DESCRIPTION
VCOM Voltage at COM
VNO Voltage at NO
ron Resistance between COM and NO ports when the channel is ON
rpeak Peak on-state resistance over a specified voltage range
ron(flat) Difference between the maximum and minimum value of ron in a channel over the specified range of conditions
INO(OFF) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state under worst-case input and output conditions
INO(PWROFF) Leakage current measured at the NO port during the power-down condition, V+ = 0
ICOM(OFF) Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state under worst-case input and output conditions
ICOM(PWROFF) Leakage current measured at the COM port during the power-down condition, V+ = 0
INO(ON) Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open
ICOM(ON) Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output (NO) open
VIH Minimum input voltage for logic high for the control input (IN)
VIL Maximum input voltage for logic low for the control input (IN)
VI Voltage at the control input (IN)
IIH, IIL Leakage current measured at the control input (IN)
tON Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON.
tOFF Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF.
QC Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input. Charge injection, QC = CL × ΔVCOM, CL is the load capacitance, and ΔVCOM is the change in analog output voltage.
CNO(OFF) Capacitance at the NO port when the corresponding channel (NO to COM) is OFF
CCOM(OFF) Capacitance at the COM port when the corresponding channel (COM to NO) is OFF
CNO(ON) Capacitance at the NO port when the corresponding channel (NO to COM) is ON
CCOM(ON) Capacitance at the COM port when the corresponding channel (COM to NO) is ON
CI Capacitance of control input (IN)
OISO OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NO to COM) in the OFF state.
BW Bandwidth of the switch. This is the frequency in which the gain of an ON channel is –3 dB below the DC gain.
THD Total harmonic distortion describes the signal distortion caused by the analog switch. This is defined as the ratio of root mean square (RMS) value of the second, third, and higher harmonic to the absolute magnitude of the fundamental harmonic.
I+ Static power-supply current with the control (IN) pin at V+ or GND

9.2 Functional Block Diagram

fbd_scds357.gif

9.3 Feature Description

Table 2. Summary Of Characteristics(1)

Configuration Single Pole
Single Throw
(SPST)
Number of channels 1
ON-state resistance (ron) 0.9 Ω
ON-state resistance flatness (ron(flat)) 0.15 Ω
Turn-on/turn-off time (tON/tOFF) 7.5 ns/12.5 ns
Charge injection (QC) 1 pC
Bandwidth (BW) 200 MHz
OFF isolation (OISO) –64 dB at 1 MHz
Total harmonic distortion (THD) 0.005%
Leakage current (ICOM(OFF)) ±4 nA
Power-supply current (I+) 0.5 μA
Package option 5-pin DSBGA, SOT-23, or SC-70
(1) V+ = 5 V, TA = 25°C

9.4 Device Functional Modes

Table 3. Function Table

IN NO TO COM,
COM TO NO
L OFF
H ON