SCDS177B OCTOBER   2004  – August 2018 TS5A3357

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
    1.     Device Images
      1.      Logic Diagram
  4. Revision History
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics for 5-V Supply
    6. 7.6 Electrical Characteristics for 3.3-V Supply
    7. 7.7 Electrical Characteristics for 2.5-V Supply
    8. 7.8 Electrical Characteristics for 1.8-V Supply
    9. 7.9 Typical Characteristics
  8. Parameter Measurement Information
  9. Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
    4. 9.4 Device Functional Modes
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Device Support
    2. 13.2 Documentation Support
    3. 13.3 Receiving Notification of Documentation Updates
    4. 13.4 Community Resources
    5. 13.5 Trademarks
    6. 13.6 Electrostatic Discharge Caution
    7. 13.7 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics for 5-V Supply(1)

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS TA V+ MIN TYP MAX UNIT
Analog Switch
Peak ON resistance rpeak 0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
Full 4.5 V 15
ON-state resistance ron VNO = 0,
ICOM = 30 mA
Switch ON,
See Figure 13
25°C 4.5 V 5 7
Full 7
VNO = 2.4 V,
ICOM = –30 mA
25°C 6 12
Full 12
VNO = 4.5 V,
ICOM = –30 mA
25°C 7 15
Full 15
ON-state resistance
match between channels
Δron VNO = 3.15 V,
ICOM = –30 mA,
Switch ON,
See Figure 13
25°C 4.5 V 0.1
ON-state
resistance flatness
ron(flat) 0 ≤ VNO ≤ V+,
ICOM = –30 mA,
Switch ON,
See Figure 13
25°C 5 V 6.5
NO
OFF leakage current
INO(OFF) VNO = 0 to V+,
VCOM = V+ to 0
Switch OFF,
See Figure 14
25°C 5.5 V –0.1 0.1 μA
Full –1 1
COM
OFF leakage current
ICOM(OFF) VCOM = 0 to V+,
VNO = V+ to 0,
Switch OFF,
See Figure 14
25°C 0 –0.1 0.1 μA
Full –1 1
NO
ON leakage current
INO(ON) VNO = 0 to V+,
VCOM = Open,
Switch ON,
See Figure 14
25°C 5.5 V –0.1 0.1 μA
Full –1 1
COM
ON leakage current
ICOM(ON) VNO = Open,
VCOM = 0 to V+,
Switch ON,
See Figure 14
25°C 5.5 V –0.1 0.1 μA
Full –1 1
Digital Control Inputs (IN1, IN2)(2)
Input logic high VIH Full V+ × 0.7 5.5 V
Input logic low VIL Full 0 V+ × 0.3 V
Input leakage
current
IIH, IIL VI = 5.5 V or 0 25°C 5.5 V 0.1 μA
Full 1
Dynamic
Turn-on time tON VNO = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
25°C 5 V 1.5 6.5 ns
Full 4.5 V to 5.5 V 1.5 7
Turn-off time tOFF VNO = V+ or GND,
RL = 500 Ω,
CL = 50 pF,
See Figure 16
25°C 5 V 0.8 3.7 ns
Full 4.5 V to 5.5 V 0.8 7
Break-before-
make time
tBBM VNO = V+,
RL = 50 Ω,
CL = 50 pF,
See Figure 17
25°C 5 V 0.5 ns
Full 4.5 V to 5.5 V 0.5
Charge
injection
QC VGEN = 0,
CL = 0.1 nF,
See Figure 21 25°C 5 V 3.4 pC
NO
OFF capacitance
CNO(OFF) VNO = V+ or GND,
Switch OFF,
See Figure 15 25°C 5 V 4.5 pF
COM
OFF capacitance
CCOM(OFF) VNO = V+ or GND,
Switch OFF,
See Figure 15 25°C 5 V 10.5 pF
NO
ON capacitance
CNO(ON) VNO = V+ or GND,
Switch ON,
See Figure 15 25°C 5 V 17 pF
COM
ON capacitance
CCOM(ON) VCOM = V+ or GND,
Switch ON,
See Figure 15 25°C 5 V 17 pF
Digital input
capacitance
CI VI = V+ or GND, See Figure 15 25°C 5 V 3 pF
Bandwidth BW RL = 50 Ω,
Switch ON,
See Figure 18 25°C 4.5 V to 5.5 V 334 MHz
OFF isolation OISO RL = 50 Ω,
f = 10 MHz,
Switch OFF,
See Figure 19
25°C 4.5 V to 5.5 V –82 dB
Crosstalk XTALK RL = 50 Ω,
f = 10 MHz,
Switch ON,
See Figure 20
25°C 4.5 V to 5.5 V –62 dB
Supply
Positive supply
current
I+ VI = V+ or GND, Switch ON or OFF 25°C 5.5 V 1 μA
Full 10
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
All unused digital inputs of the device must be held at V+ or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs, literature number SCBA004.