SLVSH42B June   2023  – July 2024 TSD05C , TSD36C

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings—JEDEC Specification
    3. 5.3 ESD Ratings—IEC Specification
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Thermal Information
    6. 5.6 Electrical Characteristics - TSD05C
    7. 5.7 Electrical Characteristics - TSD36C
    8. 5.8 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Application Information
  8. 7Device and Documentation Support
    1. 7.1 Documentation Support
      1. 7.1.1 Related Documentation
    2. 7.2 Receiving Notification of Documentation Updates
    3. 7.3 Support Resources
    4. 7.4 Trademarks
    5. 7.5 Electrostatic Discharge Caution
    6. 7.6 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)

5.7 Electrical Characteristics - TSD36C

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <50nA, across operating temperature range 36 V
VBR Breakdown voltage IIO = 10mA, I/O to GND and GND to I/O 37.8 41.2 44.2 V
ILEAK Reverse leakage current VIO = 36V, IO to GND or GND to IO 5 10 nA
VCLAMP Surge clamping voltage, tp = 8/20 µs (2) IPP = 1A, IO to GND or GND to IO 47 V
IPP = 5A, IO to GND or GND to IO 64 V
IPP = 6.5A, IO to GND or GND to IO 71 V
TLP clamping voltage, tp = 100ns IPP = 16A, IO to GND or GND to IO 56 V
RDYN Dynamic resistance (3) IO to GND 0.6 Ω
GND to IO
CL Line capacitance VIO = 0V;  ƒ = 1MHz, IO to GND 4.3 6 pF
(1) Typical parameters are measured at 25℃
(2) Nonrepetitive current pulse 8 to 20µs exponentially decaying waveform according to IEC 61000-4-5
(3) Extraction of RDYN using least squares fit of TLP characteristics between I = 10A and I = 20A