SLVSHX0 October   2024 TSD12C-Q1 , TSD15C-Q1 , TSD18C-Q1 , TSD24C-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings - AEC Specifications
    3. 5.3  ESD Ratings—IEC Specification
    4. 5.4  ESD Ratings - ISO Specifications
    5. 5.5  Recommended Operating Conditions
    6. 5.6  Thermal Information
    7. 5.7  Electrical Characteristics - TSD12C-Q1
    8. 5.8  Electrical Characteristics - TSD15C-Q1
    9. 5.9  Electrical Characteristics - TSD18C-Q1
    10. 5.10 Electrical Characteristics - TSD24C-Q1
    11. 5.11 Electrical Characteristics - TSD36C-Q1
    12. 5.12 Typical Characteristics
  7. 6 Application and Implementation
  8. 7 Application Information
  9. 8 Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.10 Electrical Characteristics - TSD24C-Q1

At TA=25℃ (unless otherwise noted) (1)
PARAMETER TEST CONDITION MIN TYP MAX UNIT
VRWM Reverse stand-off voltage IIO <10 nA, across operating temperature range 24 V
VBR Breakdown voltage IIO = 10 mA,  IO to GND and GND to IO 25.5 30.5 35.5 V
ILEAK Reverse leakage current VIO = 24 V, IO to GND or GND to IO 5 10 nA
VCLAMP Surge clamping voltage, tp = 8/20 µs  (2) IPP = 1 A, IO to GND or GND to IO 34 V
IPP = 5 A, IO to GND or GND to IO 43 V
IPP = 9 A, IO to GND or GND to IO 50 V
TLP clamping voltage, tp = 100 ns IPP = 16 A, IO to GND or GND to IO 36 V
RDYN Dynamic resistance(3) IO to GND 0.35 Ω
GND to IO
CL Line capacitance VIO = 0 V;  ƒ = 1 MHz, IO to GND 4.3 6 pF
(1) Typical parameters are measured at 25℃
(2) Nonrepetitive current pulse 8 to 20 µs exponentially decaying waveform according to IEC 61000-4-5
(3) Extraction of RDYN using least squares fit of TLP characteristics between I = 10 A and I = 20 A