SLVSHG9A October   2023  – October 2023 TSM24B

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Revision History
  6. 5Pin Configuration and Functions
  7. 6Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings -JEDEC Specifications
    3. 6.3 ESD Ratings - IEC Specifications
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Typical Characteristics
  8. 7Application and Implementation
    1. 7.1 Application Information
  9. 8Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. 9Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DBZ|3
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics

At TA = 25°C unless otherwise noted
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
VRWMReverse stand-off voltageIIO < 100 nA24V
ILEAKLeakage current at VRWMVIO = 24 V, I/O to GND2575nA
VBRBreakdown voltage, I/O to GND (1)IIO = 10 mA26.5V
VFWDForward Voltage, GND to I/O (1)IIO = 10 mA0.7V
VCLAMPSurge clamping voltage, tp = 8/20 µs (2)IPP = 20 A, I/O to GND33V
VCLAMPSurge clamping voltage, tp = 8/20 µs (2)IPP = 20 A, GND to I/O

6

8

V
CLINELine capacitance, IO to GNDVIO = 0 V, f = 1 MHz2437.5pF
(1) VBR is defined as the voltage when 10 mA is applied in the positive-going direction.
(2) Device stressed with 8/20 µs exponential decay waveform according to IEC 61000-4-5.