SLLSF63C March 2018 – July 2024 TUSB1002A
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
It may be necessary to incorporate an ESD component to protect the TUSB1002A from electrostatic discharge (ESD). TI recommends following the ESD protection recommendations listed in Table 7-2. A clamp voltage greater than value specified in Table 7-2 may require a RESD on each differential pin. Place the ESD component near the USB connector.
Parameter | Recommendation |
---|---|
Breakdown voltage | ≥ 3.5V |
I/O line capacitance | Data rates ≤ 5Gbps: ≤ 0.50pF |
Data rates > 5Gbps: ≤ 0.35pF | |
Delta capacitance between any P and N I/O pins | ≤ 0.07pF |
Clamping voltage at 8A IPP IO to GND (1) | ≤ 4.5V |
Typical dynamic resistance | ≤ 30mΩ |
Manufacturer | Part Number | RESD to pass IEC 61000-4-2 Contact ±8kV |
---|---|---|
Nexperia | PUSB3FR4 | 2Ω |
Nexperia | PESD2V8Y1BSF | 2Ω |
Texas Instruments | TPD1E04U04DPLR | 2Ω |
Texas Instruments | TPD4E02B04DQAR | 2Ω |