SLLSFX8 February   2024 TUSB211A-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Timing Requirements
    8. 5.8 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 High-Speed EQ
    4. 6.4 Device Functional Modes
      1. 6.4.1 Low-Speed (LS) Mode
      2. 6.4.2 Full-Speed (FS) Mode
      3. 6.4.3 High-Speed (HS) Mode
      4. 6.4.4 High-Speed Downstream Port Electrical Compliance Test Mode
      5. 6.4.5 Shutdown Mode
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1 Test Procedure to Construct USB High-Speed Eye Diagram
          1. 7.2.2.1.1 For a Host Side Application
          2. 7.2.2.1.2 For a Device Side Application
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RWB|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.7 Timing Requirements

MIN NOM MAX UNIT
POWER UP TIMING
TRSTN_PW Minimum width to detect a valid RSTN signal assert when the pin is actively driven low 100 µs
TSTABLE VCC must be stable before RSTN de-assertion 300 µs
TREADY Maximum time needed for the device to be ready after RSTN is de-asserted. 500 µs
TRAMP VCC ramp time 100 ms
TRAMP VCC ramp time 0.2 ms