SLLSEZ6D February   2019  – December 2023 TUSB216

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Requirements
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 High-Speed Boost
      2. 7.3.2 RX Sensitivity
    4. 7.4 Device Functional Modes
      1. 7.4.1 Low-Speed (LS) Mode
      2. 7.4.2 Full-Speed (FS) Mode
      3. 7.4.3 High-Speed (HS) Mode
      4. 7.4.4 High-Speed Downstream Port Electrical Compliance Test Mode
      5. 7.4.5 Shutdown Mode
      6. 7.4.6 I2C Mode
      7. 7.4.7 BC 1.2 Battery Charging Controller
    5. 7.5 TUSB216 Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Test Procedure to Construct USB High-speed Eye Diagram
          1. 8.2.2.1.1 For a Host Side Application
          2. 8.2.2.1.2 For a Device Side Application
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RWB|12
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

Over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT
POWER
IACTIVE_HS High Speed Active Current USB channel = HS mode. 480 Mbps traffic. VCC supply stable, with Boost = Max 22 36 mA
IIDLE_HS High Speed Idle Current USB channel = HS mode, no traffic. VCC supply stable, Boost = Max 22 36 mA
IHS_SUPSPEND High Speed Suspend Current USB channel = HS Suspend mode. VCC supply stable 0.75 1.4 mA
IFS Full-Speed Current USB channel = FS mode, 12 Mbps traffic, Vcc supply stable 0.75 1.4 mA
IDISCONN Disconnect Power Host side application. No device attachment. 0.80 1.4 mA
ISHUTDN Shutdown Power RSTN driven low, VCC supply stable 60 115 µA
CONTROL PIN LEAKAGE
ILKG_FS Pin failsafe leakage current for SDA, RSTN VCC = 0 V, pin at VIH, max 10 15 µA
ILKG_FS Pin failsafe leakage current for RX_SEN VCC = 0 V, pin at VIH, max 6 15 µA
ILKG_FS Pin failsafe leakage current for SCL VCC = 0 V, pin at VIH, max 70 nA
INPUT RSTN
VIH High level input voltage 1.5 3.6 V
VIL Low-level input voltage 0 0.5 V
IIH High level input current VIH = 3.6 V, RPU enabled ±15 µA
IIL Low level input current VIL = 0V, RPU enabled ±20 µA
INPUT DIGITAL
VIH High level input voltage (CDP_ENZ) 1.5 3.6 V
VIL Low-level input voltage (CDP_ENZ) 0 0.5 V
IIL Low level input current VIL = 0V ±20 µA
IIH High level input current VIH = 3.6 V ±15 µA
INPUT RX_SEN (3-level input, for mid level leave pin floating)
VIH(Max) Maximum High level input voltage  VCC = 2.3V to 6.5V  5.0 V
VIH(Min) Minimum High level input voltage VCC > 4.5V 3.3 V
VCC = 2.3V to 4.5V (% of VCC) 75 %
VIL Low level input voltage VCC > 4.5V 0.75 V
VCC = 2.3V to 4.5V (% of VCC) 15 %
INPUT BOOST
RBOOST_LVL0 External pulldown resistor for BOOST Level 0 160 Ω
RBOOST_LVL1 External pulldown resistor for BOOST Level 1 1.5 1.8 2 kΩ
RBOOST_LVL2 External pulldown resistor for BOOST Level 2 3.4 3.6 3.96 kΩ
RBOOST_LVL3 External pulldown resistor  for BOOST Level 3 to remove upper limit for resistor value, can be left open 7.5 kΩ
OUTPUTS CD, ENA_HS
VOH High level output voltage for CD and ENA_HS IO = –50 µA, VCC >= 3.0V 2.5 V
VOH High level output voltage  for CD IO = –25 µA, VCC = 2.3V 1.7 V
VOH High level output voltage  for ENA_HS IO = –25 µA, VCC = 2.3V 1.8 V
VOL Low level output voltage  for CD and ENA_HS IO = 50 µA 0.3 V
I2C
CI2C_BUS I2C Bus Capacitance 4 150 pF
IOL I2C open drain output current VOL = 0.4V 1.5 mA
VIL 2.3V<= VCC<= 4.3V, VI2C_BUS = 1.8V +/-10% RPull-up =1.6kΩ to 2.5kΩ, % of VI2C_BUS 25 %
VIL VI2C_BUS = 3.3V +/-10% RPull-up =2.8kΩ to 7kΩ, % of VI2C_BUS 25 %
VIH 2.3V<= VCC<= 4.3V, VI2C_BUS = 1.8V +/-10% RPull-up =1.6kΩ to 2.5kΩ, % of VI2C_BUS 80 %
VIH VI2C_BUS = 3.3V +/-10% RPull-up =2.8kΩ to 7kΩ, % of VI2C_BUS 75 %
RPull-up VI2C_BUS = 1.8V +/-10% 1.6 2 2.5 kΩ
RPull-up VI2C_BUS = 3.3V +/-10% 2.8 4.7 7 kΩ
SCL Frequency 400 kHz
DxP, DxM
CIO_DXX Capacitance to GND Measured with VNA at 240 MHz, VCC supply stable, Redriver off 2.5 pF
(1) All typical values are at VCC = 5 V, and TA = 25°C.