SLLSEV9E July   2016  – November 2023 TUSB522P

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics, Power Supply
    6. 6.6 Electrical Characteristics, DC
    7. 6.7 Electrical Characteristics, AC
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Receiver Equalization
      2. 7.3.2 De-Emphasis Control and Output Swing
      3. 7.3.3 Automatic LFPS Detection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Configuration
      2. 7.4.2 Power Modes
        1. 7.4.2.1 U0 Mode (Active Power Mode)
        2. 7.4.2.2 U2/U3 (Low Power Mode)
        3. 7.4.2.3 Disconnect Mode - RX Detect
        4. 7.4.2.4 Shutdown Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 ESD Protection
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.6 Electrical Characteristics, DC

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
3-State CMOS Inputs(EQ1/2, DE1/2)
VIHHigh-level input voltageVCC x 0.8V
VIMMid-level input voltageVCC / 2.V
VILLow-level input voltageVCC x 0.2V
VFFloating voltageVIN = High impedance0.36 x VCCV
RPUInternal pull-up resistance410kΩ
RPDInternal pull-down resistance240kΩ
IIHHigh-level input currentVIN = 3.6 V26µA
IILLow-level input currentVIN = GND, VCC = 3.6.V–26µA
2-State CMOS Input (OS1/2, EN_RXD)
VIHHigh-level input voltageVCC x 0.7V
VILLow-level input voltageVCC x 0.3V
RPDInternal pull-down resistance660kΩ
IIHLow-level input currentVIN = 3.6 V25µA
IILLow-level input currentVIN = GND, VCC = 3.6.V–10µA