7 Specifications
7.1 Absolute Maximum Ratings(1)
over operating free-air temperature range (unless otherwise noted)
|
MIN |
MAX |
UNIT |
Supply Voltage Range |
VDD Steady-state supply voltage |
–0.3 |
1.4 |
V |
VDD33 Steady-state supply voltage |
–0.3 |
3.8 |
V |
Voltage Range |
USB_SSRXP_UP, USB_SSRXN_UP, USB_SSRXP_DN[4:1], USB_SSRXN_DP[4:1] and USB_VBUS terminals |
-0.3 |
1.4 |
V |
XI terminals |
-0.3 |
2.45 |
V |
All other terminals |
-0.3 |
3.8 |
V |
Storage temperature, Tstg |
–65 |
150 |
°C |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
|
VALUE |
UNIT |
V(ESD) |
Electrostatic discharge |
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) |
±2000 |
V |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) |
±500 |
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
|
MIN |
NOM |
MAX |
UNIT |
VDD(1) |
1.1V supply voltage |
0.99 |
1.1 |
1.26 |
V |
VDD33 |
3.3V supply voltage |
3 |
3.3 |
3.6 |
V |
USB_VBUS |
Voltage at USB_VBUS PAD |
0 |
|
1.155 |
V |
TA |
Operating free-air temperature |
TUSB8041A |
0 |
|
70 |
°C |
TJ |
Operating junction temperature |
–40 |
|
105 |
°C |
(1) A 1.05-V, 1.1-V, or 1.2-V supply may be used as long as minimum and maximum supply conditions are met.
7.4 Thermal Information
THERMAL METRIC(1) |
TUSB8041A |
UNIT |
RGC |
64 PINS |
RθJA |
Junction-to-ambient thermal resistance |
26 |
°C/W |
RθJCtop |
Junction-to-case (top) thermal resistance |
11.5 |
°C/W |
RθJB |
Junction-to-board thermal resistance |
5.3 |
°C/W |
ψJT |
Junction-to-top characterization parameter |
0.2 |
°C/W |
ψJB |
Junction-to-board characterization parameter |
5.2 |
°C/W |
RθJCbot |
Junction-to-case (bottom) thermal resistance |
1.0 |
°C/W |
7.5 Electrical Characteristics, 3.3-V I/O
over operating free-air temperature range (unless otherwise noted)
PARAMETER |
OPERATION |
TEST CONDITIONS |
MIN |
TYP |
MAX |
UNIT |
VIH |
High-level input voltage(1) |
VDD33 |
|
2 |
|
VDD33 |
V |
VIL |
Low-level input voltage(1) |
VDD33 |
|
0 |
|
0.8 |
V |
VI |
Input voltage |
|
|
0 |
|
VDD33 |
V |
VO |
Output voltage(2) |
|
|
0 |
|
VDD33 |
V |
tt |
Input transition time (trise and tfall) |
|
|
0 |
|
25 |
ns |
Vhys |
Input hysteresis(3) |
|
|
|
|
0.13 x VDD33 |
V |
VOH |
High-level output voltage |
VDD33 |
IOH = -4 mA |
2.4 |
|
|
V |
VOL |
Low-level output voltage |
VDD33 |
IOL = 4 mA |
|
|
0.4 |
V |
IOZ |
High-impedance, output current(2) |
VDD33 |
VI = 0 to VDD33 |
|
|
±20 |
µA |
IOZP |
High-impedance, output current with internal pullup or pulldown resistor(4) |
VDD33 |
VI = 0 to VDD33 |
|
|
±250 |
µA |
II |
Input current(5) |
VDD33 |
VI = 0 to VDD33 |
|
|
±15 |
µA |
RPD |
Internal pull-down resister |
|
|
13.5 |
19 |
27.5 |
KΩ |
RPU |
Internal pull-up resistor |
|
|
14.5 |
19 |
25 |
KΩ |
(1) Applies to external inputs and bidirectional buffers.
(2) Applies to external outputs and bidirectional buffers.
(3) Applies to GRSTz.
(4) Applies to pins with internal pullups/pulldowns.
(5) Applies to external input buffers.
7.6 Timing Requirements, Power-Up
PARAMETER |
DESCRIPTION |
MIN |
TYP |
MAX |
UNIT |
td1 |
VDD33 stable before VDD stable(3) |
See (2) |
|
|
ms |
td2 |
VDD and VDD33 stable before de-assertion of GRSTz |
3 |
|
|
ms |
tsu_io |
Setup for MISC inputs(1) sampled at the de-assertion of GRSTz |
0.1 |
|
|
µs |
thd_io |
Hold for MISC inputs(1) sampled at the de-assertion of GRSTz |
0.1 |
|
|
µs |
tVDD33_RAMP |
VDD33 supply ramp requirements |
0.2 |
|
100 |
ms |
tVDD_RAMP |
VDD supply ramp requirements |
0.2 |
|
100 |
ms |
(1) MISC pins sampled at de-assertion of GRSTz: BATEN[4:1], AUTOENz, FULLPWRMGMTz, GANGED, SMBUSz, and PWRCTL_POL.
(2) There is no power-on relationship between VDD33 and VDD unless GRSTz is only connected to a capacitor to GND. Then VDD must be stable minimum of 10 µs before the VDD33.
(3) An active reset is required if the VDD33 supply is stable before the VDD11 supply. This active Reset shall meet the 3ms power-up delay counting from both power supplies being stable to the de-assertion of GRSTz.
7.7 Hub Input Supply Current
Typical values measured at TA = 25°C
PARAMETER |
VDD33 |
VDD |
UNIT |
3.3 V |
1.1 V |
LOW POWER MODES |
Power On (after Reset) |
3 |
30 |
mA |
Upstream Disconnect |
3 |
24 |
mA |
Suspend |
3 |
30 |
mA |
ACTIVE MODES (US state / DS State) |
3.0 host / 1 SS Device and Hub in U1 / U2 |
45 |
240 |
mA |
3.0 host / 1 SS Device and Hub in U0 |
45 |
356 |
mA |
3.0 host / 2 SS Devices and Hub in U1 / U2 |
45 |
301 |
mA |
3.0 host / 2 SS Devices and Hub in U0 |
45 |
457 |
mA |
3.0 host / 3 SS Devices and Hub in U1 / U2 |
45 |
372 |
mA |
3.0 host / 3 SS Devices and Hub in U0 |
45 |
563 |
mA |
3.0 host / 4 SS Devices and Hub in U1 / U2 |
45 |
440 |
mA |
3.0 host / 4 SS Devices and Hub in U0 |
45 |
672 |
mA |
3.0 host / 1 SS Device in U0 and 1 HS Device |
84 |
372 |
mA |
3.0 host / 2 SS Devices in U0 and 2 HS Devices |
95 |
512 |
mA |
2.0 host / HS Device |
45 |
55 |
mA |
2.0 host / 4 HS Devices |
76 |
74 |
mA |