SLVSEQ3B September   2018  – May 2022 TVS1801

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings - JEDEC
    3. 7.3 ESD Ratings - IEC
    4. 7.4 Recommended Operating Conditions
    5. 7.5 Thermal Information
    6. 7.6 Electrical Characteristics
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Protection Specifications
      2. 8.4.2 Reliability Testing
      3. 8.4.3 Zero Derating
      4. 8.4.4 Bidirectional Operation
      5. 8.4.5 Transient Performance
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documenation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Support Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.6 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
ILEAKLeakage CurrentMeasured at VIN = ±VRWM, TA = 27°C0.425nA
Measured at VIN = ±VRWM, TA = 85°C290
VBRBreak-down VoltageIIN = ±1 mA23.3524.4V
VCLAMPClamp Voltage±Ipp IEC 61000-4-5 Surge (8/20 µs), VIN = 0 V before surge, TA = 27°C27.428.8V
±IPP IEC 61000-4-5 Surge (8/20 µs), VIN =±VRWM before surge, TA = 125°C30.4
RDYN8/20 µs surge dynamic resistanceCalculated from VCLAMP at .5*IPP and IPP surge current, TA = 25°C50mΩ
CINInput pin capacitanceVIN = VRWM, f = 1 MHz, 30 mVpp, IO to GND65pF
SRMaximum Slew Rate0-±VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, TA = 27°C2.5V/µs
0-±VRWM rising edge, sweep rise time and measure slew rate when IPEAK = 1 mA, TA = 85°C1