SCES968 June   2024 TXS0104V-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information (PW, BQA, RUT)
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics, VCCA = 1.8 ± 0.15V
    7. 5.7  Switching Characteristics, VCCA = 2.5 ± 0.2V
    8. 5.8  Switching Characteristics, VCCA = 3.3 ± 0.3V
    9. 5.9  Switching Characteristics: Tsk, TMAX
    10. 5.10 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Load Circuits
    2. 6.2 Voltage Waveforms
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Architecture
      2. 7.3.2 Input Driver Requirements
      3. 7.3.3 Power Up
      4. 7.3.4 Enable and Disable
      5. 7.3.5 Pullup and Pulldown Resistors on I/O Lines
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Overview

The TXS0104V-Q1 device is a directionless voltage-level translator specifically designed for translating logic voltage levels. The A port is able to accept I/O voltages ranging from 1.65V to 3.6V, while the B port can accept I/O voltages from 2.3V to 5.5V. The device is a pass gate architecture with edge rate accelerators (one shots) to improve the overall data rate. 10kΩ pullup resistors, commonly used in open drain applications, have been conveniently integrated so that an external resistor is not needed. While this device is designed for open drain applications, the device can also translate push-pull CMOS logic outputs.