SLUS223H April   1997  – October 2024 UC1842 , UC1843 , UC1844 , UC1845 , UC2842 , UC2843 , UC2844 , UC2845 , UC3842 , UC3843 , UC3844 , UC3845

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1  Detailed Pin Description
        1. 7.3.1.1 COMP
        2. 7.3.1.2 VFB
        3. 7.3.1.3 ISENSE
        4. 7.3.1.4 RT/CT
        5. 7.3.1.5 GROUND
        6. 7.3.1.6 OUTPUT
        7. 7.3.1.7 VCC
        8. 7.3.1.8 VREF
      2. 7.3.2  Pulse-by-Pulse Current Limiting
      3. 7.3.3  Current-Sense
      4. 7.3.4  Error Amplifier With Low Output Resistance
      5. 7.3.5  Undervoltage Lockout
      6. 7.3.6  Oscillator
      7. 7.3.7  Synchronization
      8. 7.3.8  Shutdown Technique
      9. 7.3.9  Slope Compensation
      10. 7.3.10 Soft Start
      11. 7.3.11 Voltage Mode
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 UVLO Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Open-Loop Test Fixture
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Input Bulk Capacitor and Minimum Bulk Voltage
        2. 8.2.2.2  Transformer Turns Ratio and Maximum Duty Cycle
        3. 8.2.2.3  Transformer Inductance and Peak Currents
        4. 8.2.2.4  Output Capacitor
        5. 8.2.2.5  Current Sensing Network
        6. 8.2.2.6  Gate Drive Resistor
        7. 8.2.2.7  VREF Capacitor
        8. 8.2.2.8  RT/CT
        9. 8.2.2.9  Start-Up Circuit
        10. 8.2.2.10 Voltage Feedback Compensation
          1. 8.2.2.10.1 Power Stage Poles and Zeroes
          2. 8.2.2.10.2 Slope Compensation
          3. 8.2.2.10.3 Open-Loop Gain
          4. 8.2.2.10.4 Compensation Loop
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Feedback Traces
        2. 8.4.1.2 Bypass Capacitors
        3. 8.4.1.3 Compensation Components
        4. 8.4.1.4 Traces and Ground Planes
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.2.6 Gate Drive Resistor

RG is the gate driver resistor for the power switch, QSW. The selection of this resistor value must be done in conjunction with EMI compliance testing and efficiency testing. Using a larger resistor value for RG slows down the turnon and turnoff of the MOSFET. A slower switching speed reduces EMI but also increases the switching loss. A trade-off between switching loss and EMI performance must be carefully performed. For this design, a 10-Ω resistor is chosen for the gate drive resistor.