SLUSCQ2E October 2017 – June 2024 UCC21520-Q1
PRODUCTION DATA
Table 8-1 lists reference design parameters for the example application: UCC21520-Q1 driving 1200-V SiC-MOSFETs in a high side-low side configuration.
PARAMETER | VALUE | UNITS | ||
---|---|---|---|---|
Power transistor | C2M0080120D | - | ||
VCC | 5.0 | V | ||
VDD | 20 | V | ||
Input signal amplitude | 3.3 | V | ||
Switching frequency (fs) | 100 | kHz | ||
DC link voltage | 800 | V |