SLUSCJ9F June   2016  – November 2024 UCC21520

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Description (continued)
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information
    5. 6.5  Power Ratings
    6. 6.6  Insulation Specifications
    7. 6.7  Safety Limiting Values
    8. 6.8  Electrical Characteristics
    9. 6.9  Timing Requirements
    10. 6.10 Switching Characteristics
    11. 6.11 Insulation Characteristics Curves
    12. 6.12 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Propagation Delay and Pulse Width Distortion
    2. 7.2 Rising and Falling Time
    3. 7.3 Input and Disable Response Time
    4. 7.4 Programable Dead Time
    5. 7.5 Power-up UVLO Delay to OUTPUT
    6. 7.6 CMTI Testing
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 8.3.2 Input and Output Logic Table
      3. 8.3.3 Input Stage
      4. 8.3.4 Output Stage
      5. 8.3.5 Diode Structure in the UCC21520 and the UCC21520A
    4. 8.4 Device Functional Modes
      1. 8.4.1 Disable Pin
      2. 8.4.2 Programmable Dead-Time (DT) Pin
        1. 8.4.2.1 Tying the DT Pin to VCC
        2. 8.4.2.2 DT Pin Connected to a Programming Resistor Between DT and GND Pins
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Designing INA/INB Input Filter
        2. 9.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 9.2.2.3 Gate Driver Output Resistor
        4. 9.2.2.4 Gate to Source Resistor Selection
        5. 9.2.2.5 Estimate Gate Driver Power Loss
        6. 9.2.2.6 Estimating Junction Temperature
        7. 9.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 9.2.2.7.1 Selecting a VCCI Capacitor
          2. 9.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 9.2.2.7.3 Select a VDDB Capacitor
        8. 9.2.2.8 Dead Time Setting Guidelines
        9. 9.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 9.2.3 Application Curves
  11. 10Power Supply Recommendations
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  13. 12Device and Documentation Support
    1. 12.1 Third-Party Products Disclaimer
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Certifications
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Support Resources
    6. 12.6 Trademarks
    7. 12.7 Electrostatic Discharge Caution
    8. 12.8 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.8 Electrical Characteristics

VVCCI = 3.3 V or 5 V, 0.1-µF capacitor from VCCI to GND, VVDDA = VVDDB = 15 V, 1-µF capacitor from VDDA and VDDB to VSSA and VSSB, TJ = –40°C to +150°C, unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENTS
IVCCI  VCCI quiescent current VINA = 0 V, VINB = 0 V 1.4 2.0 mA
IVDDA, IVDDB VDDA and VDDB quiescent current VINA = 0 V, VINB = 0 V 1.0 2.5 mA
IVCCI VCCI operating current (f = 500 kHz) current per channel 3 3.5 mA
IVDDA, IVDDB VDDA and VDDB operating current (f = 500 kHz) current per channel, COUT = 100 pF 2.5 4.2 mA
VCC SUPPLY VOLTAGE UNDERVOLTAGE THRESHOLDS
VVCCI_ON UVLO Rising threshold 2.55 2.7 2.85 V
VVCCI_OFF UVLO Falling threshold 2.35 2.5 2.65 V
VVCCI_HYS UVLO Threshold hysteresis 0.2 V
VDD SUPPLY VOLTAGE UNDERVOLTAGE THRESHOLDS
VVDDA_ON, VVDDB_ON UVLO Rising threshold 5-V UVLO 5.7 6.0 6.3 V
VVDDA_OFF, VVDDB_OFF UVLO Falling threshold 5-V UVLO 5.4 5.7 6.0 V
VVDDA_HYS, VVDDB_HYS UVLO Threshold hysteresis 5-V UVLO 0.3 V
VVDDA_ON, VVDDB_ON UVLO Rising threshold 8-V UVLO 7.7 8.5 8.9 V
VVDDA_OFF, VVDDB_OFF UVLO Falling threshold 8-V UVLO 7.2  7.9 8.4 V
VVDDA_HYS, VVDDB_HYS UVLO Threshold hysteresis 8-V UVLO 0.6 V
INA, INB AND ENABLE
VINAH, VINBH, VENH Input high threshold voltage 1.2 1.8  2 V
VINAL, VINBL, VENL Input low threshold voltage 0.8 1 1.2 V
VINA_HYS, VINB_HYS, VEN_HYS Input threshold hysteresis 0.8 V
VINA, VINB Negative transient, ref to GND, 100 ns pulse Not production tested, bench test only –5 V
OUTPUT
IOA+, IOB+ Peak output source current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 4 A
IOA-, IOB- Peak output sink current CVDD = 10 µF, CLOAD = 0.18 µF, f = 1 kHz, bench measurement 6 A
ROHA, ROHB Output resistance at high state IOUT = –10 mA, TA = 25°C, ROHA, ROHB do not represent drive pull-up performance. See tRISE in Section 6.10 and Section 8.3.4 for details. 5 Ω
ROLA, ROLB Output resistance at low state IOUT = 10 mA, TA = 25°C 0.55 Ω
VOHA, VOHB Output voltage at high state VVDDA, VVDDB = 15 V, IOUT = –10 mA, TA = 25°C 14.95 V
VOLA, VOLB Output voltage at low state VVDDA, VVDDB = 15 V, IOUT = 10 mA, TA = 25°C 5.5 mV